Discretes

New Yorker Electronics is aiming at displacing PowerPAK 1212 packaged mosfets by stocking a pair of symmetric 80V n-channel mosfets in a single 3.3 x 3.3mm package from Vishay. Called SiZF4800LDT, the “device provides designers with a space-saving solution for synchronous buck converters, point-of-load converters, and half-bridge and full-bridge power stages,” according to New Yorker. “In these applications, the high ...

Infineon is aiming at automotive power control with a 5 x 7mm top-side cooled surface-mount package, pitching it against the 5 x 6mm bottom-cooled SSO8. The package, SSO10T, has a 10μm gap instead of a thermal pad on the PCB side, and around 95% of heat will leave through the top, according to the company, typically to the ECU housing ...

Panasonic Industry has introduced compact surface-mount electrolytic polymer hybrid capacitors that are “one size smaller than ZC series with the same capacitance” and AEC-Q200 compliant for automotive use, it said. Called the ZL series, the parts come in five case sizes from 5mm diameter (ø) x 5.8mm high (47 or 82μF), to 10ø x10.2mm (470 or 680μF). There are two ...

Navitas Semiconductor has demonstrated a 4.5kW 54V server power supply using both GaN and SiC transistors. Claimed density is “over 130W/in3 with efficiency over 97%. The architecture replaces the standard four diode bridge (and boost power factor correction) at the front end with an active all-transistor circuit – a multi-phase totem pole power factor corrector. While often called ‘bridgeless’ because ...

Infineon Technologies has put 2kV silicon carbide mosfet die in its four lead TO-247PLUS-4-HCC package, aiming them at systems with dc links up to 1.5kV. “It is the first discrete silicon carbide device with a breakdown voltage of 2,000V on the market, with a creepage distance of 14mm and clearance distance of 5.4mm,” according to the company. “The devices are ...

Component distributor Richardson RFPD is to stock a range of 0603 (1.5 x 0.7mm) RF components from TTM Technologies, all branded ‘Xinger’ and “designed to meet the density and performance challenges of next-generation 5G transceiver and power amplifier applications”, according to Richardson. They include: Three Xinger 90° 3dB hybrid couplers at 1.8 – 2.3GHz, 2.2 – 2.8GHz or 3.1 – ...

EPC is claiming “the lowest on-resistance GaN FET on the market” for its 1mΩ 100V EPC2361, which comes in a 3 x 5mm QFN package with top and bottom cooling. 1mΩ is at 50A 25°C with 5V on the gate, and rises to ~1.8mΩ at the max operating temperature of 150°C (minimum is -40°C). The preliminary data sheet has no ...

Rohm has created a proprietary trench MOS structure for 100V Schottky diodes to improve the trade-off between forward voltage and reverse leakage. It has been used to create the YQ series of rectifier diodes, available in surface-mount packages from 0.5 x 1mm to TO-263 with ratings between 1A and 30A. Most of them are available with automotive qualification. Leakage is ...

Innoscience Technology has launched a 100V bi-directional GaN-on-silicon bi-directional transistor, intended to replace a pair of back-to-back mosfets for turning a power rail on and off. It “can be employed in 48V or 60V battery management systems, as well as for high-side load switch applications in bidirectional converters and switching circuits in power systems”, according to the company, which sees ...

Toshiba has introduced a 60V p-channel mosfet rated at 60V and 90A continuous current, with AEC-Q101 qualification for automotive use. Called XPH8R316MC (90A), the company sees it being used in vehicles, in load switches, electronic relays and motor drives. A similar part, XPH13016MC, is the same except rated at 60A. In both cases, pulse rating is double the continuous current ...