Discretes

Infineon adds to its 1200V CoolSiC MOSFET family with the CoolSiC Easy 2B power modules

Vishay has announced an Rds(on) x Qg figure-of-merit of 3.1 Ω*nC for its latest fourth generation 600V E Series power n-channel mosfet, claiming that “this results in the industry’s lowest gate charge times on-resistance for devices in the same class”, said the firm, where ‘class’ is 600V mosfets used in power conversion applications. Called SiHH068N60E, its on-resistance is 27% down compared with the firm’s ...

STMicroelectronics’ DM6 600V mosfets contain a fast-recovery body diode to bring super-junction technology to full-bridge (and half) phase-shifted zero voltage switched (ZVS) converters – and other applications that need a robust diode to handle dV/dt. “Leveraging ST’s carrier lifetime control technology, the mosfets have reduced reverse-recovery time [trr] to minimise power dissipation in the diode when turning off after freewheeling,” ...

Californian gallium nitride transistor maker Transphorm has shipped over 250,000 650V GaN fets – manufactured at its Aizu wafer foundry in Japan, it revealed. The firm also said that its wafer-foundry’s 15 million parts annual capacity for 50mΩ devices could “easily” scale to 5x that volume, and that its manufacturing process can be structured to scale from 6in wafers now to ...

STMicroelectronics’ MDmesh M6 600V super-junction transistors are aimed at medium-power resonant and hard-switching converter topologies. There are 37 part numbers covering 13 to 72A, with threshold voltage optimised for soft switching, suiting the transistors LLC resonant converters and boost-PFC converters. Rds(on) to as low as 36mΩ. For hard-switching topologies, the capacitance profile is claimed to enhance light-load efficiency, and gate charge ...

UnitedSiC has expanded its UF3C FAST series of silicon carbide mosfets to include parts with Kelvin contacts. Available in 650V and 1.2kV versions, they come in a TO-247-4L package. “The Kelvin package avoids gate ringing and false triggering which would otherwise require slowing of switching speeds to manage the large common source inductance of three-leaded packages,” said the firm, which ...

Syfer has added higher voltage ceramic capacitors to its AEC-Q200 series of MLCCs, extending maximum working voltage in the series from 2kV up to 4kV. “Designed for electric vehicle applications where ever higher voltages are needed, but where a margin for derating has to be accommodated for, they are ideal for power train use, like battery management and invertors,” claimed ...

Infineon has availability of  a new member of its CoolMOS P7 family, the 950 V CoolMOS P7 Superjunction MOSFET. The chip has  improved DPAK R DS(on) enabling higher density designs. Similar to the other members of the  P7 family from Infineon, it comes with an integrated Zener diode ESD protection. This results in better assembling yields, less cost, and less ESD ...

“Historically, p-channel jfets availability has declined,” according to Californian fet maker Linear Integrated Systems (LIS). “Complementary single n-channel and p-channel jfets have become limited to a few industry standards. Complementary monolithic dual n-channel and p-channel jfets have not been offered for many years, leaving designers under supported.” And its answer to the dearth of choice is the LSJ689, a 1.8nV/Hz (at 1kHz) ...

Intended for protecting op-amp, sample-and-hold and multiplexer inputs, Linear Systems has created a range of extremely low-leakage picoamp diodes (PADs) with reveres currents ranging from 1pA to 100pA, which are “pin-for-pin replacements for Siliconix-Vishay”, said Linear. They are available in: TO-92 two-lead (part name = JPAD, 35Vmax reverse) TO-72 (PAD, 45Vmax) SOT-23 (SSTPAD 30V) DFN eight-lead (PAD-DFN, 30Vmax) The leakage in ...