Discretes

Nexperia is aiming at protecting high-speed automotive data lines with ESD protection diodes whose capacitance is as low as 0.28pF. With stand-off voltages in the 18 – 32V range and a snap-back characteristic, the AEC-Q101 (automotive) qualified parts are intended to be used close to connectors on boards. The base part number is PESDxxVF1Byy-Q, with xx representing the nominal stand ...

Nexperia has announced a series of 500mA dual bipolar transistors that include base resistors within the 2 x 2 x 0.65mm package – there is a choice of SOT1118 (DFN2020-6) or AEC-Q101 automotive qualified versions in SOT1118D (DFN2020D-6) with wettable flanks. There are 12 devices, giving every combination of: package, NPN+NPN, NPN+PNP or PNP+PNP pairing and 1 or 2.2kΩ series ...

Central Semiconductor has announced a pair of dual hyper-fast rectifiers in TO-247 packaging, designed for use with super-junction mosfets. CRU24715-600 has two 600V 15A rectifiers with a common cathode CRU24730-600 has two 600V 30A rectifiers with dual common cathode Connecting the internal diodes in parallel pushes current rating to 30A or 60A respectively, and the package can cope with up ...

Rohm has co-packaged a gate driver and a 650V GaN power transistor to ease the design of power supplies in servers and ac adaptors. “While GaN hemts are expected to contribute to greater miniaturisation and improved power conversion efficiency, the difficulty in handling the gate compared to silicon mosfets requires the use of a dedicated gate driver,” according to the ...

Toshiba has picked a four-pin package for its latest third-generation silicon carbide mosfets. “Devices in the TWxxxZxxxC series are the first Toshiba SiC products to be housed in a TO-247-4L(X) package with a fourth pin,” according to the company. “This allows the provision of a Kelvin connection of the signal source terminal for the gate drive, thereby reducing the parasitic ...

EPC Space has introduced radiation-hardened gallium nitride devices for space-borne power converters and other rugged environments. There are two devices, one rated at 200V and the other at 300V: EPC7020G  – 200V, 14.5mΩ, 80A (pictured) EPC7030G – 300V, 32mΩ, 50A “Applications including power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation, reaction wheels and deep space ...

Infineon recently released 650V H variants of its gen 7 IGBTs, without a lot of detail on how they differ from the rest of gen 7, so Electronics Weekly got in touch. H brings the total to three gen 7 classes in two voltage ranges: H7 in 650V and 1.2kV, T7 in in 650V and 1.2kV, and S7 in 1.2kV. ...

Infineon is aiming its latest mosfets at automotive ECUs (electronic control units) with 24 to 72V power rails. “In addition to passenger cars, two and three-wheelers as well as light vehicles are increasingly being electrified,” said the company. “To address this, Infineon is complementing its OptiMOS 5 portfolio of automotive mosfets in the 60 V and 120 V range with ...

Rutronik is adding 600 V and 1200 V FREDs (fast recovery epitaxial diodes) from Panjit of Taiwan to its portfolio. Panjit FREDs come in two classes: Optima (low forward voltage) and Speedy (low reverse recovery time). They “are ideal for rectifier or freewheeling circuits in a wide range of power applications, such as UPS systems or data centers, but also ...

Efficient Power Conversion has added two 40V GaN transistors to its radiation-hardened high-reliability portfolio. EPC7001 has 4mΩ on-resistance, 60A (250A 300µs pulse 25°C) capacity and occupies 7mm2 EPC7002 turns on to 14.5mΩ and can handle 10A (62A 300µs pulse 25°C) through its 1.87mm2 footprint “EPC’s rad hard devices exhibit superior resistance to radiation compared to traditional silicon solutions,” said EPC. ...