Vishay has introduced two n-channel TrenchFET mosfets for telecom and industrial applications. 60V SiJH600E and 80V SiJH800E operate up to +175°C and come in the company’s ~8 x 8mm PowerPak 8x8L package, which has no-bondwire construction for board-level reliability and gullwing leads for mechanical stress relief. On-resistances are typically 0.65mΩ and 1.22mΩ respectively at 10 V. Vishay claims these to be 54% and ...
Discretes
Photo-relay can handle 1kV for automotive
Toshiba has introduced a photo-relay capable of operating with 1.5kV across its output switch – the company’s first with such an output withstand voltage – “ensuring that it is compatible with the vast majority of traction batteries”, it said. AEC-Q101 qualified and aimed at battery management systems, TLX9160T consists of an infra-red emitting diode optically coupled to back-to-back photo-mosfets. Although intended ...
600V super-junction mosfets span 190 to 580mΩ
Korean transistor maker Magnachip has announced today 11 600V super-junction mosfets Describing them as ‘2.5th generation’, they are claimed to have lower switching loss and better power efficiency than its previous devices. Rds(on) varies between 190 and 580mΩ and packages include DPAK TO-220F and TO-220SF (see photo). A gate-source Zener diode is embedded to protect against electrostatic discharge and other surges. ...
Anglia signs to Ekinglux for discrete LEDs
Anglia Components has signed a UK and Ireland distribution agreement with Chinese LED maker Ekinglux. “We are always seeking to strategically expand our supplier base to stabilise our supply chain.,” said Anglia technical director David Pearson, “The addition of Ekinglux, one of China’s top ten LED manufacturers, widens the range of optoelectronics devices we offer. Ekinglux has an excellent reputation for quality and ...
More-on: Infineon’s source-down mosfet package
Infineon announced source-down packaged power mosfets earlier today in which it flipped the die to improve transistor performance. Alongside the part announcement it released a diagram and its reasons for what it did. The source-down mosfet is on the right, and the more conventional device on the left. According to Infineon: The source-down package (1) is externally the same as the ...
Infineon upgrades OptiMOS
Infineon is shipping a new generation of OptiMOS Source-Down (SD) power MOSFETs. They come in a PQFN 3.3 x 3.3 mm 2 package and a wide voltage class ranging from 25 V up to 100 V. This package sets a new standard in power MOSFET performance, offering higher efficiency, higher power density, superior thermal management and low bill-of-material (BOM). The ...
200W/channel GaN Class-D audio amp eval board, and a matching PSU
GaN Systems is claiming up to 96% power efficiency from a 200 + 200W (8Ω) Class-D stereo amplifier built around its gallium nitride power transistors. THD+N is under 0.03%, with further optimisation possible, according to the company. 300W/channel is available into 4Ω. Called the Gen2 Amplifier, the evaluation kit comes with a matching 400W (550W peak) LLC mains power supply design, that ...
Quad opto-relays in 2 x 6mm
Toshiba has launched three quad Form-A voltage driven photorelays, claiming one of them with one of the smallest mounting areas in the industry. They are Toshiba’s first four-circuit, 4-Form-A, relays, in a 12.5mm2 (2 x 6.25 x 1.3mm) package dubbed S-VSON16T. “The area is approximately 14% less compared with the mounting area of four one-channel relays,” according to the company. ...
High energy density capacitors are up to 90% lighter than ceramics
Miniature micro-layer (MML) film capacitors offer energy density of 400j/dm3 for weight and size reductions compared to polypropylene or polyester dielectrics. The capacitors developed by Exxelia are available from New Yorker Electronics. They also have an increased operating temperature up to 140°C and transient voltage protection. Capacitance ranges from 1μF – 1000μF and voltages from 50V – 1,000V. Operating temperature ...
650V automotive-grade SiC mosfet launches ST’s Gen3
STMicroelectronics had debuted its third generation of silicon carbide mosfet with a 650V device aimed at electric-vehicle power-trains. Called SCT040H65G3AG, the part typically has a 40mΩ on-resistance and can carry 30A through its Kelvin source H2PAK-7 package (right). Regarding gen 3 “ST’s new SiC devices are specifically optimised for automotive applications including traction inverters, on-board chargers and dc-dc converters, as well as e-climate ...