Discretes

Toshiba is aiming at battery pack protection with a 12V 20A common-drain dual n-channel mosfet. The new part is SSM14N956L and “uses Toshiba’s micro-process, in common with the already released 13.5A SSM10N954L”, according to the company. Application circuit for the earlier SSM10N954L dual mosfet Alongside the mosfets are clamp devices to protects the gates from excessive voltage as well as ...

Toshiba has announced twelve 650V silicon carbide (SiC) Schottky barrier diode (SBDs) based upon its 3rd generation technology. In this series, called TRSxxx65H, according to the company a new Schottky metal has been employed, and the junction barrier structure has been changed to lower the electric field compared with the 2nd generation to reduce leakage. Versions with nominal maximum continuous ...

Nexperia has entered the IGBT market, with a 600V 30A device, to be followed by 40, 50 and 75A types. “IGBT is a relatively mature technology,” said the company. “Nonetheless, the market for these devices is expected to grow in line with the increased adoption of solar panels and electric vehicle chargers. Nexperia’s 600V IGBTs feature a carrier-stored trench-gate field-stop ...

Nexperia has added an 8x8mm package option, and a second 5x6mm option, to its ‘NextPower’ mosfet range which is designed to decrease spiking when switching to reduce EMI. “The Qgate.Rds(on) figure-of-merit has long been a focus for semiconductor manufacturers aiming to improve the efficiency of MOSFET switches,” according to the company. “However, relentlessly pushing this figure ever lower has had ...

Toshiba has lunched a series of 600V super-junction mosfets with one that achieves 55mΩ in a 10 x 12 x 2.3mm TOLL package. TK055U60Z1 is the first of the 600V DTMOSVI series – there are already some 650V DTMOSVI parts. Rds(on) is a 13% improvement over a similar devices in its earlier DTMOSIV-H series, claimed the company, and Rds(on) x ...

Infineon has used its latest silicon carbide die technology in a 1,200V mosfet for automotive on-board chargers and dc-dc converters. The snappily-named AIMBG120R010M1 comes in a 10 x 15 x 4.4mm D2PAK-7L (7 lead TO263) package and handles 1.2kV across -55 to 175°C. Creepage is 5.89mm, suiting the device to 800V systems. Its ‘Gen1p’ process has been created to improved ...

Rohm is aiming at motor drives operating on 24, 36 or 48V with n-channel mosfets rated at 40, 60, 100 or 150V to give some leeway for spikes and noise. There are two series with 13 devices all-told: nine in 5x6x1mm HSOP8 (below left) packaging called RS6xxxx, and four in 3x3x0.8mm HSMT8 packaging called RH6xxxx, with current ratings between 25A ...

Infineon  is in volume production of its  OptiMOS 7 40V MOSFET family for automotive applications and they can be ordered in August. They combine 300 mm thin-wafer technology with innovative packaging and are  suitable for standard and future automotive 40V MOSFET applications, such as electric power steering, braking systems, disconnect switches new zone architectures. OptiMOS 7 is also aiming at ...

Infineon Technologies has integrated 600V GaN HD-GIT (hybrid-drain-embedded gate injection transistor) manufacturing into its production line. “The portfolio of discrete and integrated power stage devices provides designers with the necessary flexibility to meet their specific needs for industrial applications complying with JEDEC standards JESD47 and JESD22,” said the company. Available in DSO-20-85, DSO-20-87, HSOF-8-3, LSON-81- and TSON-8 packaging, Rds(on) values ...

Nexperia has introduced a 10A 650V silicon carbide (SiC) industrial Schottky diode in a 2pin through-hole TO-220 plastic package. Called PSC1065K, the company is not making its full data sheet public – the data brief reveals 22nC total capacitive charge (Vr=400V, 200A/μs, Tj=150°C), but not forward voltage. Editor’s note, this did read 15nC – taken from the data brief which ...