Power

Infineon Technologies has put 2kV silicon carbide mosfet die in its four lead TO-247PLUS-4-HCC package, aiming them at systems with dc links up to 1.5kV. “It is the first discrete silicon carbide device with a breakdown voltage of 2,000V on the market, with a creepage distance of 14mm and clearance distance of 5.4mm,” according to the company. “The devices are ...

Long Beach, CA: Rohm Semiconductor rose above the industry’s GaN vs SiC debate with announcements from both camps. The first was a design win for its 650V GaN device, the EcoGaN, for the 45W output USB-C charger C4 Duo (pictured) by Innergie (a Delta brand). The company said that its GaN device contributes to efficiency in power supply and increased ...

At APEC 2024, Power Integrations‘ chairman and CEO, Balu Balakrishnan, “declared war on DC-DC post regulators”, as the company introduced the GaN-based InnoMux-2 switcher IC family. The company said that the new ICs are an example of its value and energy focus because it combines AC-DC and DC-DC stages into a single power converter, resulting in a reduction in power ...

The choice of battery for an application is critical. It affects the bill of materials and product lifetime cost, says Björn Rosqvist. Consider a battery-powered remote sensor. The cost of its battery is usually small compared with the overall product cost, but then think about the cost of replacing that battery. For wireless sensors deployed in remote areas, used for ...

Transient gate overvoltage ringing during turn-on is a common phenomenon in GaN-based power converters, but a lifetime equation can account for all bias conditions with respective fractional lifetime, say Shengke Zhang, Han Gao and Siddhesh Gajare. Gate overvoltage spikes during device turn-on transients are commonly observed in GaN HEMTs (high electron mobility transistors) under high frequency, fast-switching conversion applications. The ...

Analog semiconductor manufacturer ABLIC Inc. embarked on a new start under a new company name in 2018, against the backdrop of a rich history spanning over 50 years. In June 2023, five years later, Seiji Tanaka took office as the new president. While focusing on planning and development capabilities as well as high-value-added products, Tanaka is also strengthening initiatives in ...

Pulsiv, the Cambridge power electronics specialist, is set to release a series of reference designs and assembled modules for USB-C applications that will deliver an average efficiency of more than 95%. This has been developed in collaboration with the GaN company Innoscience and magnetics expert, Frenetic. Designs will be released throughout 2024 to support a new class of sustainable USB-C ...

Analog Devices has created a stand-alone 100V half-bridge driver for GaN power hemts “with a propagation delay of 10ns and delay matching of 1.5ns between the top and bottom channels, making it suitable for high-frequency dc-dc converters, motor drivers and class-D audio amplifiers”, according to the company. Called LT8418, this IC looks very much like the output stage used within ...

Microchip is aiming at motor control by combining a triple half-bridge mosfet gate driver, a 100MHz processor and CAN FD transceivers in the same IC. Other members of the family offer LIN transceivers instead of CAN, or a CAN interface without transceivers, or no CAN or LIN, and a base model has a 70MHz processor. Some have SENT interfaces for ...

Power module revenue will grow from $8 billion in 2023 to $16 billion by 2029 representing a 12.1% CAGR between 2023 and 2029, according to  Yole Group. The power module packaging costs fully depend on the packaging materials, such as die-attach and ceramic substrate materials, and the package size. In 2023, it represented a $2.3 billion market in 2023, with ...