Building upon traditional FinFET principles, this innovation introduces an additional well in the nanowire that further enhances the sensitivity of the device.
The device features a 35-40nm wide silicon FinFET with a 25nm nanowell as the active sensing area.
Within the well, binding of an estimated ten short single-stranded DNA molecules boasts a clear signal of 40mV, which is the double of the signal achieved from the previous FinFET device.
Noteworthy are also its near-ideal electrical properties, marked by a subthreshold swing of 66 mV/dec, close to the theoretical minimum of 60. This demonstrates that electrolyte gating effectively happened inside the nanowell.
The challenges of creating such a nanowell FET lay in the need to remove material while preserving the integrity of the entire semiconductor device.
Imec‘s innovative processing techniques, such as sacrificial layers to enable the formation of the self-aligned nanowell, and precise material selection, including a C3N3 self-assembled monolayer coating, contribute to the device’s reproducibility, reliability, and pioneering design.



Future steps involve experimental verification of single-molecule detection potential, for both the current nanowell and the earlier developed FinFET biosensor, and exploration beyond DNA sensing.
Imec also aims to explore nanopore FETs, enabling DNA sequencing and proteomics.
Combined, these innovations showcase the burgeoning potential of transistors in parallel biosensing at the nanoscale.