Tag Archives: FET

Imec has unveiled another pioneering design – the nanowell FET. Building upon traditional FinFET principles, this innovation introduces an additional well in the nanowire that further enhances the sensitivity of the device. The device features a 35-40nm wide silicon FinFET with a 25nm nanowell as the active sensing area. Within the well, binding of an estimated ten short single-stranded DNA ...

EPC has introduced a 40V 1.6mΩ GaN fet for high power density applications including servers running from 48 – 54V. Called EPC2069, it is “designed for the secondary side of the LLC dc-dc converter from 40 – 60V to 12V, which is becoming common for the new 48V – 54V input servers required for high density computing applications such as ...

UnitedSiC has introduced silicon carbide FETs in D2PAK-7L surface mount packages. They cover 650V and 1,200V operation, and have on-resistances from 30 to 80mΩ (650V) or 40 to 150mΩ (1.2kV). “The D2PAK-7L SiC FETs [have] a Kelvin source connection improving gate drive return performance,” according to the company. “Through the utilisation of silver sintering, die attachments can be done on ...

 Nexperia has decreased on-resistance in its second-generation 650V GaN power transistors. “With Rds(on) performance typically down to 35mΩ [Tj 25°C], the GaN fets target single-phase ac-dc and dc-dc industrial switched mode power supplies ranging from 2kW to 10kW, especially server and telecoms supplies that must meet 80 Plus Titanium efficiency regulations. Branded as ‘H2’ and numbered GAN041-650WSB, they come in TO-247 and are cascode ...

UnitedSiC has introduced what it claims is industry’s lowest Rds(on) 650V SiC FET in a low-profile DFN 8×8 surface-mount package. Called UF3SC065030D8S, its Rds(on) is 34mΩ, and  UF3SC065040D8S is a cheaper partner device that achieves 45mΩ. “Both SiC FETs have a current rating of 18A (limited by wire count in the package), and a maximum operating temperature of 150°C,” according to ...

Researchers from the Moscow Institute of Physics and Technology (MIPT) have grown atomically thin films of molybdenum disulfide over much of a 100mm wafers, and built a transistor from the material. Like graphene, molybdenum disulfide can be created in a mono-layer. Unlike graphene, which is a conductor, MoS2 is a semiconductor with a bandgap. “Each MoS2 layer has a sandwich ...

Nano-scale organic transistors can combine high current capability and high on/off current ratio, according to a team at Ludwig-Maximilian University in Munich, which has created a short-channel ‘vertical electrolyte-gated’ fet. “Our aim was to develop a transistor design which combines the ability to drive high currents that is typical of classical transistors with the low-voltage operation required for use as ...

Grenoble-based Exagan is introducing gallium nitride power transistors for automotive and server applications at Electronica. Read our full Electronica 2018 coverage » “With the products’ drain-source on resistance capabilities ranging from 30mΩ to 65 mΩ, these new releases provide enhanced performance and power efficiency for diverse applications including electric vehicles (EV), industrial equipment and data servers,” said the firm. Also ...

“Historically, p-channel jfets availability has declined,” according to Californian fet maker Linear Integrated Systems (LIS). “Complementary single n-channel and p-channel jfets have become limited to a few industry standards. Complementary monolithic dual n-channel and p-channel jfets have not been offered for many years, leaving designers under supported.” And its answer to the dearth of choice is the LSJ689, a 1.8nV/Hz (at 1kHz) ...

Dipping into the Linear Integrated Systems website again, revealed another interesting app note on fet amplifier front-ends, written around the firm’s LSK489 monolithic dual low-noise n-fet. Called, LSK489 Application Note, and written by Bob Cordell, it is well worth a look. Amongst the many things I had not seen before (although sadly this is not saying much, considering the poor state of ...