Power Supplies

Infineon Technologies has launched an ultra-low resistance high-side switch in a 9.9 x 11.7 x 2.3mm surface-mount package. For automotive use on 12V circuits, the IC is “ISO 26262-ready for supporting the integrator in evaluation of hardware element according to ISO 26262:2018 Clause 8-13”, said the company. Called BTS50005-1LUA, its nominal on-resistance is 0.6mΩ (1.1mΩ max at 150°C) and carrying ...

Toshiba has announced twelve 650V silicon carbide (SiC) Schottky barrier diode (SBDs) based upon its 3rd generation technology. In this series, called TRSxxx65H, according to the company a new Schottky metal has been employed, and the junction barrier structure has been changed to lower the electric field compared with the 2nd generation to reduce leakage. Versions with nominal maximum continuous ...

Nexperia has created a dc-dc converter chip designed to extend the life of 3V primary coin cells in bursty IoT applications, such as those with pulsed radio transmitters. “The IC’s designed to extend the life of a typical non-rechargeable lithium coin cell battery while also increasing peak output current by up to 25x compared to what a typical coin cell ...

Texas Instruments has created a series of precision current monitors with digital outputs, for use across power rails from  -100mV to +85V, at up to ±78.64A. In each case, an internal ΣΔ ADC measures current across an integrated sensing resistor, as well as voltage and temperature – communication with the host if via I2C. The ICs need a separate supply ...

STMicroelectronics has created its first galvanically isolated gate driver for GaN transistors. Called STGAP2GS the wide body SO-8W packaged single-channel driver can work with rails up to 1.2kV. The package is 5.8mm long by 10.3mm across pins tips, with 7.5mm between leg roots on either side of the isolation barrier. A separate supply (above), or dual supplies (left) if a ...

Nexperia has entered the IGBT market, with a 600V 30A device, to be followed by 40, 50 and 75A types. “IGBT is a relatively mature technology,” said the company. “Nonetheless, the market for these devices is expected to grow in line with the increased adoption of solar panels and electric vehicle chargers. Nexperia’s 600V IGBTs feature a carrier-stored trench-gate field-stop ...

Toshiba has created a range of 36V-capable LDOs to work from USB-PD and 24V power rails. The first three devices in the planned TCR1HF series, available today, are TCR1HF18B, TCR1HF33B and TCR1HF50B with fixed outputs of 1.8V, 3.3V and 5.0V respectively. Devices are in the pipeline at 2.5, 2.8, 3.0, 3.1 and 3.2V. Maximum drop-out over the -40 to 125°C ...

Diodes has created a range of precision current shunt monitors that have a -0.3 to 26V common-mode sense range irrespective of supply voltage, allowing both high-side and low-side measurement – and a reference pin is provided for bi-directional current measurement. Called the ZXCT21xQ family, there are six gain options: 50V/V  ZXCT213Q 75V/V  ZXCT215Q 100V/V  ZXCT214Q 200V/V  ZXCT210Q 500V/V  ZXCT211Q 1kV/V  ...

For vehicle functional-safety applications, STMicroelectronics has combined hot-swap, soft-start and ideal-diode OR-ing in an IC intended to work with a pair of external n-channel mosfets over 4 to 65V. Called STPM801, “the ideal-diode controller drives an external mosfet replacing a Schottky diode conventionally used for reverse-input protection and output-voltage hold-up”, said ST. “When a reverse-voltage event occurs, in case of ...

Nexperia has added an 8x8mm package option, and a second 5x6mm option, to its ‘NextPower’ mosfet range which is designed to decrease spiking when switching to reduce EMI. “The Qgate.Rds(on) figure-of-merit has long been a focus for semiconductor manufacturers aiming to improve the efficiency of MOSFET switches,” according to the company. “However, relentlessly pushing this figure ever lower has had ...