Texas Instruments has announced a series of GaN power switches for ac-dc and dc-dc converters that include an integrated driver, protection and current sense emulation. The parts, called LMG362x, differ in the size of the GaN hemt switch included. They are: LMG3622 650V120mΩ 8.5A LMG3624 650V 170mΩ 6A LMG3626 650V 270mΩ 3.6A “Using the LMG3622 only requires setting the desired ...
Power Supplies
The latest Electronics Weekly product news on power supplies.
Modular 600W medical psu on 3 x 5inch footprint
Vox Power has introduced a compact 600W modular ac-dc power supply with four output slots, and a choice of eight output modules that can be mixed and matched among them. NEVO+600S is the name, and it measures ~41 x 78 x 134mm (plus blade terminals), giving it a 5 x 3inch footprint. “Tailored for demanding industrial applications where size, power ...
Better-than-TO247 top-side-cooled SMD package for 650V auto mosfets
Infineon has put 650V mosfet die from its CFD7A portfolio into a surface-mount package with “improved electrical performance over the well-known TO247 through-hole devices, thus enabling efficient energy utilisation in onboard chargers and dc-dc converters”, it said. ‘QDPAK TSC’ is a top-side-cooled package (see images) announced earlier this year and now registered with JEDEC – at the same time it ...
1.2kV and 2kV SiC half-bridges in 62mm modules switch 250kW
Infineon is putting 1,200V and 2,000V SiC mosfet half bridges into 62mm module packaging. “The package enables the use of SiC for mid-power applications from 250kW, where silicon reaches the limits of power density with IGBT technology,” according to the company. “Symmetrical internal package design provides identical switching conditions for the upper and lower switches.” For speedy replacement, the main ...
30V common-drain n-mosfet for bi-directional USB power
Toshiba has launched its first 30V n-channel common-drain dual mosfet, for controlling bi-directional power flow in USB-connected devices. The USB Power Delivery standard supports power levels from 5V 3A to 48V 5A, and allows swapping of the power supply and receiving side, requiring devices with USB charging to support bi-directional power. In developing a 30V common drain mosfet, called SSM10N961L, ...
Opto-isolated gate voltage generator switches mosfets and IGBTs
Littelfuse has introduced an optically isolated photovoltaic gate driver for mosfets and IGBTs. Essentially, photovoltaic gate drivers are opto-isolated relays without the internal output mosfets, allowing mosfets to be picked appropriate to the load. They are not fast, but they allow a microcontroller to switch a large load on and off across a huge potential difference. This one is called ...
300W conduction-cooled rugged dc-dc for railway and industrial
Vox Power has announced a set of conduction-cooled 300W dc-dc converters, for railway and other rugged environment use. Measuring 188.6 x 116 x 25.4, the 33.6 to 160V input range is intended to cover 48, 72, 96 and 110 V railway batteries. Dips to 28.8V can be ridden through covered for 100ms, complete drop-outs for 10ms, and 168V peaks for 1s. ...
Li-Ion battery protection devices
Nisshinbo Micro Devices of Tokyo has launched the NB7142 and NB7143 series Li-Ion battery protection ICs. The devices are intended for applications requiring high-precision overcurrent and short-circuit detection, such as portable gadgets, smartphones, game consoles and handheld devices. The NB7142 and NB7143 are exceptional protection ICsdesigned for one-cell Li-ion/polymer batteries. They are equipped with standard features such as overcharge/over-discharge voltage ...
Arm Q2 results
A letter to Arm shareholders, signed by the CEO and CFO, reports on Arm’s calendar Q3 (fiscal Q2) performance – the first quarter since it returned to the public equity market. A summary reads: ‘Revenue increased 28% year-over-year, topping $800 million for the first time.’ ’ The better than expected revenue was driven by multiple high-value long-term license agreements signed ...
1.25ns gate driver for GaN hemts
Rohm has introduced a nanosecond gate driver for GaN power transistors, aimed at lidar, dc-dc converters and Class-D audio. “It is ideal for high-speed GaN switching, with a minimum gate input pulse width of 1.25ns,” according to the company. “As GaN devices are sensitive towards gate input over-voltage, Rohm has developed a method to suppress gate overshoots and has implemented ...