Tag Archives: diode

Hamamatsu Photonics has launched a TO-8 canned SPAD (single photon avalanche photodiode) with an in-built thermoelectric cooler. Called S16835, there are two models, which differ in the width* of their sensors: 54µm or 100µm. In standard operating conditions (25°C ambient, -20°C SPAD) typical dark currents are 15 or 60 count/s respectively (50 or 200 count/s max). Terminal capacitance and gain ...

A new technique applied to avalanche photodiodes improves the operating range or sampling rate of OTDRs, says Ben White. An optical time-domain reflectometer (OTDR) is a fibre optic network test instrument that measures the characteristics of an optical fibre. It can determine the fibre’s length and attenuation and detect a variety of fault types. The network test instrument works by ...

Rohm has created a proprietary trench MOS structure for 100V Schottky diodes to improve the trade-off between forward voltage and reverse leakage. It has been used to create the YQ series of rectifier diodes, available in surface-mount packages from 0.5 x 1mm to TO-263 with ratings between 1A and 30A. Most of them are available with automotive qualification. Leakage is ...

Rutronik is adding 600 V and 1200 V FREDs (fast recovery epitaxial diodes) from Panjit of Taiwan to its portfolio. Panjit FREDs come in two classes: Optima (low forward voltage) and Speedy (low reverse recovery time). They “are ideal for rectifier or freewheeling circuits in a wide range of power applications, such as UPS systems or data centers, but also ...

Toshiba has announced twelve 650V silicon carbide (SiC) Schottky barrier diode (SBDs) based upon its 3rd generation technology. In this series, called TRSxxx65H, according to the company a new Schottky metal has been employed, and the junction barrier structure has been changed to lower the electric field compared with the 2nd generation to reduce leakage. Versions with nominal maximum continuous ...

Rohm is to put short wavelength infra-red LEDs and photo diodes in 1.6 x 0.8mm (1608) packages for material detection in portable, wearable and hearable devices. “As SWIR is used to detect the presence of substances and their constituent components by taking advantage of characteristics of water, ice, gases or glucose that absorb specific wavelengths, target applications include light sources ...

Nexperia has introduced a 10A 650V silicon carbide (SiC) industrial Schottky diode in a 2pin through-hole TO-220 plastic package. Called PSC1065K, the company is not making its full data sheet public – the data brief reveals 22nC total capacitive charge (Vr=400V, 200A/μs, Tj=150°C), but not forward voltage. Editor’s note, this did read 15nC – taken from the data brief which ...

Eindhoven University of Technology has made a photodiode with such low noise (<10-6mA/cm2 dark current) and wide dynamic range (<150dB), that it can optically detect a heartbeat at a distance of 1.3m. TU Eindhoven researcher Riccardo Ollearo having the pulse in his finger measured remotely by thin-film photodiode Through an unexpected photo-multiplier effect, it can achieve a photo-electron yield above ...

Diodes has announced silicon carbide Schottky diodes rated at 650V and 1.2kV, the company’s first SiC Schottkys. The DSCxxA065 series has eleven 650V diodes rated at 4, 6, 8 or 10A. The DSCxx120 series has eight 1.2kV diodes rated at 2, 5 or 10A. “These wide-bandgap Schottky barrier diodes bring the benefits of significantly improved efficiency and high-temperature reliability,” said ...

Bourns has released its highest current carrying bi-directional transient voltage suppressor diode series in surface-mount DFN packaging (17 x 15 x 2.5mm in this case). Model PTVS20-015C-H is capable of handling 20kA surges. “The diode meets IEC 61000-4-2 Level 4 ESD protection requirements. It also assists in meeting IEC 61000-4-5 8/20 μs current surge requirements for lightning protection and is ...