Power Mosfets for DC-DC converters

Siliconix has announced power Mosfets said to combine the low Qgd from the firm’s WFET technology with the low rDS(on) values of TrenchFET technology.

Siliconix has announced power Mosfets said to combine the low Q_gd from the firm’s WFET technology with the low r_DS(on) values of TrenchFET technology.

The Mosfets are designed for low-side operation in synchronous buck (single- and multi-phase configurations) DC-DC converters in notebook PCs, servers, and VRM modules, as well as in synchronous rectification in fixed telecoms systems.

The Si4368DY and Si7668DP feature on-resistance of 3.6mOhm (at 4.5V max.). The maximum gate threshold voltage for both devices is 1.8V.

The WFET technology uses a thicker gate oxide at the bottom of the devices’ silicon trench to reduce C_rss and Q_gd with minimal impact on r_DS(on) performance, boosting the efficiency of dc-to-dc converters. WFET’s low conduction and switching losses lead to a teo per cent improvement in DC-DC converter efficiency, claimed the supplier.

The Si4368DY comes in a PowerPAK SO-8, the Si7668DP in an SO-8. Samples and production quantities are available now, with lead times of 10-12 weeks for larger orders.

Siliconix is a subsidiary of Vishay Intertechnology.