P-channel diamond mosfets have been made many times because the carbon bulk can be doped with boron, or surface hydrogen can pull appropriate carriers into the channel. N-channel diamond mosfets have not proved so easy, blocking the route to diamond CMOS and all the high-voltage (bandgap = 5.5eV), high temperature and high thermal conductivity advantages that it might bring. Now ...
Nexperia has introduced 30V and 12V n-channel trench mosfets in 1mm packaging. In 1 x 0.6 x 0.2mm DSN1006: PMCB60XN 30V, 4A, 50mΩ (4.5Vg) PMCB60XNE 30V, 4A, 55mΩ (4.5Vg), 2.5kV HBM ESD protection “This gives them the lowest on-resistance per die area among similar 30V mosfets in the market,” claimed the company. In 0.96 x 0.96 x 0.24mm DSN1006 (SOT8007) ...
Vishay has introduced two n-channel TrenchFET mosfets for telecom and industrial applications. 60V SiJH600E and 80V SiJH800E operate up to +175°C and come in the company’s ~8 x 8mm PowerPak 8x8L package, which has no-bondwire construction for board-level reliability and gullwing leads for mechanical stress relief. On-resistances are typically 0.65mΩ and 1.22mΩ respectively at 10 V. Vishay claims these to be 54% and ...
Toshiba had developed n-channel mosfets for automotive applications, based on its U-MOSVIII-H process. XPN3R804NC (40A abs max) and XPN7R104NC (20A) are rated for 40V operation XPN6R706NC (40A) and XPN12006NC (20A) are rated for 60V operation “They all exhibit extremely low on-resistance values,” according to the company, “reaching down to 3.8mΩ for the XPN3R804NC at 10V, plus minimal leakage current.” In ...
CEA-Leti scientists have made FDSOI CMOS at 500°C, “while showing strong performance gains especially in p-type MOS logic devices”, according to the French lab, which has branded the process ‘CoolCube’. 500°C processing is important when trying to shrink die by building CMOS with p-channel mosfets above rather than next to their n-channel counterparts – called a ‘3D sequential’ structure. If too much ...
Toshiba Electronics Europe GmbH has launched 100V N-channel power mosfets for automotive applications, available in the surface mount SOP advance (WF) package. Designed for 48V system applications, the devices are suitable use in boost converters for integrated starter generators and LED headlights as well as motor drives, switching regulators and load switches. The XPH6R30ANB device boasts on-resistance RDS (ON) value ...
French semiconductor lab CEA-Leti has developed two techniques to induce local strain in FD-SOI (fully-depleted silicon on insulator) for circuits that will produce more speed at the same, or lower, power consumption, and improve performance, it claims. There is compressive SiGe for p-FETs and tensile Si for n-FETs. “In addition to clearing the path to improved performance in FD-SOI technology, they ...
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