Innoscience Technology has created a gate driver specifically for GaN power transistors. The single-channel INS1001DE is intended to supply fast powerful voltage-regulated waveforms to the gates, which are extremely sensitive to over-voltage stress. Its output pulse amplitude is set by a low-drop-out regulator using two resistors, to, for example 6V which is commonly specified for enhancement-mode GaN hemts (diagram below ...
EPC is claiming “the lowest on-resistance GaN FET on the market” for its 1mΩ 100V EPC2361, which comes in a 3 x 5mm QFN package with top and bottom cooling. 1mΩ is at 50A 25°C with 5V on the gate, and rises to ~1.8mΩ at the max operating temperature of 150°C (minimum is -40°C). The preliminary data sheet has no ...
Innoscience Technology has launched a 100V bi-directional GaN-on-silicon bi-directional transistor, intended to replace a pair of back-to-back mosfets for turning a power rail on and off. It “can be employed in 48V or 60V battery management systems, as well as for high-side load switch applications in bidirectional converters and switching circuits in power systems”, according to the company, which sees ...
Allegro MicroSystems has created an isolated gate driver IC for GaN power transistors that has no need for high-side bootstrapping nor the provision of a secondary side drive supply voltage. Instead, a dc-dc converter within AHV85111 produces secondary-side dc power rails – one positive and one negative – to provide gate drive power from a 12V supply (10.8 – 13.2V) ...
Rohm has introduced a nanosecond gate driver for GaN power transistors, aimed at lidar, dc-dc converters and Class-D audio. “It is ideal for high-speed GaN switching, with a minimum gate input pulse width of 1.25ns,” according to the company. “As GaN devices are sensitive towards gate input over-voltage, Rohm has developed a method to suppress gate overshoots and has implemented ...
Power IC company Cambridge GaN Devices (CGD) has signed a deal to develop power adapters and data centre PSUs with Chicony Power Technology of Taiwan, and Cambridge University Technical Services (CUTS). “Chicony Power is one of the leading SMPS manufacturers in the world, so this agreement represents an incredible milestone in CGD’s journey,” said CGD CEO Giorgia Longobardi. “Chicony Power ...
Cambridge GaN Devices is adding package-top per-device 2D barcodes to its GaN power transistors, which can be read by customers using commercial code readers to reveal function, batch and position-on-wafer. “Although we have a great deal of data to prove the ruggedness and reliability of our hemts, GaN is still a relatively new technology, certainly when compared to traditional silicon ...
Efficient Power Conversion has added two 40V GaN transistors to its radiation-hardened high-reliability portfolio. EPC7001 has 4mΩ on-resistance, 60A (250A 300µs pulse 25°C) capacity and occupies 7mm2 EPC7002 turns on to 14.5mΩ and can handle 10A (62A 300µs pulse 25°C) through its 1.87mm2 footprint “EPC’s rad hard devices exhibit superior resistance to radiation compared to traditional silicon solutions,” said EPC. ...
For phased-array C-Band radar, CMPA5259050S and CMPA5259080S from Wolfspeed are respectively 50W and 80W 5.0-5.9GHz GaN MMIC power amplifiers. The “two-stage reactively-matched amplifier approach enables high power and power added efficiency to be achieved in a 5 x 5mm QFN surface -mount package” (black in photo), according to Richardson RFPD, which is stocking the parts, and offering design support. CMPA5259080S ...
STMicroelectronics has a nice backgrounder on how to drive enhancement-mode GaN power hemts. It starts with a section on the various types of e-mode GaN power hemt and then shifts to describing the necessities and pit-falls of gate driving in gradually increasing, but always readable, detail. ‘E-mode GaN technology: tips for best driving‘ is ST’s AN5583 application note.
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