Infineon improves 100V mosfets with OptiMOS 6

Infineon is aiming at high switching frequency applications dc-dc converter applications such as telecom and solar with its OptiMOS 6 family of 100V mosfets.

Infineon-SuperSO8-fused-leads-OptiMOS-6 610

Compared with OptiMOS 5, the company is claiming:

Rds(on) better by 18%
Qg x Rds(on) better by 29%
Qgd x Rds(on) better by 42%

“In a 600W, 36-60V to 12V zero-voltage switched buck-boost converter, OptiMOS 6 in SuperSO8 with 2.2mΩ can achieve 1% higher efficiency than the 2.7mΩ BSC027N10NS5 OptiMOS 5 across the whole load range,” claimed Infineon. “This results in a 7W lower power loss due to improved charges and Rds(on), enabling up to 15% higher power density.”

Applications are foreseen in switch mode power supplies, as well as solar, power tools, drones and battery management systems.

Parts are available now in 5 x 6mm SuperSO8 and 3.3 x 3.3mm PQFN 3.3×3.3.

Package	Part	RDS(on) @ 10V
SuperSO8 5x6mm	ISC022N10NM6	2.2mΩ
	ISC027N10NM6	2.7mΩ
	ISC030N10NM6	3mΩ
	ISC060N10NM6	6mΩ
	ISC080N10NM6	8mΩ
	ISC230N10NM6	23mΩ
PQFN 3.3×3.3mm	ISZ080N10NM6	8mΩ
PQFN 3.3×3.3mm	ISZ230N10NM6	23mΩ

Total gate charge for the 2.24mΩ ISC022N10NM6 is 73nC typ (91nC max) at 50Vdd 25A Id 0-10Vgs. Typical diode reverse recovery charge is 70nC at 50Vr, 25A If, 100A/µs dif/dt (325nC at 1,000A/µs). Its data sheet is here