Power

Infineon announced source-down packaged power mosfets earlier today in which it flipped the die to improve transistor performance. Alongside the part announcement it released a diagram and its reasons for what it did. The source-down mosfet is on the right, and the more conventional device on the left. According to Infineon: The source-down package (1) is externally the same as the ...

Silanna Semiconductor has released a 33W charger reference design built around its SZ1131 and silicon power FETs. This follows a larger 65W design released last year. The active clamp fly-back design, called RD-23, “provides a route to delivering performance that matches or exceeds that of commercially available 30W GaN-based chargers at a cost more readily associated with conventional silicon designs,” claimed the ...

ST has launched a family of GaN power semiconductors in the STPOWER portfolio. The first device in ST’s new G-HEMT transistor family is the 650V SGT120R65AL with 120mΩ maximum on-resistance (RDS(on)), 15A maximum current capability, and a Kelvin source connection for optimum gate driving. Update: SGT120R65AL and SGT65R65AL (below) went in to volume production in July 2023 It is available now in ...

The ePower chipset family of 100V, 65A IC chipsets integrate a 100V EPC23101 eGaN driver and EPC2302 eGaN FET. Developed by Efficient Power Conversion (EPC), they reduce the solution size for high power density applications, including 48V DC-DC conversion in computing and brushless DC (BLDC) motor drives for e-mobility, robotics and drones. The ePower chipset is capable of a maximum withstand voltage of 100V, ...

Two medically approved open frame ac-dc converters, the LOF450 and LOF550, have been added to the Mornsun LOF series of medical and industry standard power supplies, available from Relec Electronics. The LOF series consists of low cost, reliable ac-dc converters which meet the latest regulatory standards. They are characterised by thermal design excellence and very short lead times, says the ...

STMicroelectronics had debuted its third generation of silicon carbide mosfet with a 650V device aimed at electric-vehicle power-trains. Called SCT040H65G3AG, the part typically has a 40mΩ on-resistance and can carry 30A through its Kelvin source H2PAK-7 package (right). Regarding gen 3 “ST’s new SiC devices are specifically optimised for automotive applications including traction inverters, on-board chargers and dc-dc converters, as well as e-climate ...

Microchip has tied up with power component company Mersen to create a 150kVA silicon carbide three-phase evaluation design. “When power inverter designers can source a proven solution, they can avoid sourcing individual parts and reduce risk through reliability. Designers now have an all-in-one evaluation system,” said Microchip v-p of discretes Leon Gross. Called Power Stack, the design provides 16kW/litre, peaks at ...

Onsemi is aiming at 80 Plus Titanium efficiency in server PSUs as well as telecoms with a 600V power mosfet family called 600V Superfet V. “80 Plus Titanium certification requires server and data storage hardware to deliver 90% power efficiency levels in 10% load conditions, and 96% efficiencies when dealing with 50% loads,” said company general manger Asif Jakwani. The 10% load condition ...

Designed to be soldered through holes in a PCB, LF PowerBasket connectors from Wurth are dropped through holes and top-side-soldered to produce high current plug in and out connections using 3mm or 6mm diameter male pins. The sockets can be used one at a time or, due 0.6mm positional tolerance, several contacts can be plugged in at the same time ...

Alpha and Omega Semiconductor has announced a series of super-junction power mosfets. Branded αMOS5, its first members are both 600V 250A transistors in TO-247 packaging: the 40mΩ AOK040A60, and the 42mΩ AOK042A60FD ‘fast body diode’ device – reverse recovery is typically 252ns (25A, 100A/μs, 400V) compared with 525ns in the 40mΩ part. “The optimised capacitance of the 40mΩ product will provide customers the ...