Navitas and Avnet Silica collaborate to expand GaN power across Europe

An agreement between GaN power IC and SiC power device manufacturer, Navitas Semiconductor, and the European semiconductor division of distributor Avnet, Avnet Silica is intended to grow the European market for GaNFast power ICs.

The partnership will expand the distributor’s wide-band gap semiconductor portfolio, commented Gilles Beltran, president, Avnet Silica. “We envisage this cooperation will bring huge benefits for customers operating at the cutting edge of power system architectures in a wide selection of applications,” he said.

David Carroll, Navitas’ senior vice president of worldwide sales added that the combination will support designers and engineers to meet increasingly stringent efficiency and size requirements and regulations. “With our highly experienced technical team and our European applications lab, together, we can support customers with the best possible solutions and fastest time-to-market,” he said.

Navitas’ GaNFast power ICs are based on its GaNSense technology and integrate power, drive and control capabilities, autonomous protection and loss-less current sensing. They are claimed to deliver the industry’s highest energy efficiency, smallest footprints and the fastest power conversion performance. The latest family of GaNSense half-bridge ICs enables ac-dc power supplies to achieve MHz switching frequencies in soft-switching applications using a single component, said the company.

GaN is characterised by low resistance and high frequency switching with applications for compact power supplies in servers and IT equipment as well as power supplies in EVs, hybrid EVs, photovoltaic inverters and RF switching. Allied Market Research valued the worldwide GaN power device market at $110.3m in 2019 and projected it would reach $1244.9 by 2027 – a CAGR of 35.4% for the forecast period.

Visit Avnet Silica at electronica 2022 Hall C2-101 and Navitas Semiconductor Hall B4-126