Tag Archives: silicon carbide

Delta has created a 500kW electric vehicle charger for trucks and busses. Called UFC500, it uses silicon carbide power transistors and charges two smaller vehicles simultaneously at up to 250kW each, or one vehicle at 460kW. The exterior design meets IP55 and IK10, and cables are top-mounted to reduce the changes of damage, on a moving arm to extend reach ...

Navitas Semiconductor has demonstrated a 4.5kW 54V server power supply using both GaN and SiC transistors. Claimed density is “over 130W/in3 with efficiency over 97%. The architecture replaces the standard four diode bridge (and boost power factor correction) at the front end with an active all-transistor circuit – a multi-phase totem pole power factor corrector. While often called ‘bridgeless’ because ...

LEM and Semikron Danfoss have teamed up to monitor current in automotive silicon carbide power mosfet modules. The result is ‘Nano’, a current sensor that is compatible with Semikron’s DCM SiC power modules, which are rated at 750 or 1,200V and 200 to 1,000A. “The idea behind the Nano concept was to design a core-based current sensor that could fit ...

SemiQ will be exhibiting its 1.2kV SOT-227 silicon carbide mosfet power modules at APEC, the Applied Power Electronics Conference, at the end of February. The modules come with or without a co-packaged Schottky diode, with current ratings between 30 and 113A, and on-resistance spanning 80mΩ to 20mΩ respectively (see table). The SOT-227 package is designed to be bolted to a ...

Infineon is putting 1,200V and 2,000V SiC mosfet half bridges into 62mm module packaging. “The package enables the use of SiC for mid-power applications from 250kW, where silicon reaches the limits of power density with IGBT technology,” according to the company. “Symmetrical internal package design provides identical switching conditions for the upper and lower switches.” For speedy replacement, the main ...

Hyundai and Kia have signed supply agreement for SiC and silicon power semiconductors from Infineon, lasting to 2030, for which Infineon which will build and reserve manufacturing capacity for SiC and Si power modules and chips. “This partnership empowers Hyundai Motor and Kia to stabilise its semiconductor supply,” said Hyundai head of strategy Heung Soo Kim. “Infineon stands as a valued ...

Nexperia has teamed up with Kyocera AVX to develop an industrial 650V 20A silicon carbide rectifier module. It is aimed at “high frequency power applications ranging from 3kW to 11 kW power stack designs [in] industrial power supplies, electric vehicle charging stations and on-board chargers,” according to Nexperia. It “has a low inductance package and it has been qualified to ...

Only a few weeks ago Onsemi announced that its silicon carbide power transistors are to be used in BorgWarner Viper electric vehicle traction inverters, and now STMicroelectronics has revealed something similar. “STMicroelectronics will supply BorgWarner with third-generation 750V silicon carbide power mosfet die for their proprietary Viper-based power module,” according to ST. “This power module is used in BorgWarner’s traction ...

Motor inverter maker Vitesco Technologies has signed a silicon carbide component supply deal with Rohm “worth over one billion US dollars until 2030”, according to the companies. This fruit was born of a development partnership started in 2020, leading to two unnamed automotive customers adopting Vitesco inverters built around Rohm SiC components, with “Vitesco supplying a first series project as ...

Infineon has used its latest silicon carbide die technology in a 1,200V mosfet for automotive on-board chargers and dc-dc converters. The snappily-named AIMBG120R010M1 comes in a 10 x 15 x 4.4mm D2PAK-7L (7 lead TO263) package and handles 1.2kV across -55 to 175°C. Creepage is 5.89mm, suiting the device to 800V systems. Its ‘Gen1p’ process has been created to improved ...