Tag Archives: SiC

Delta has created a 500kW electric vehicle charger for trucks and busses. Called UFC500, it uses silicon carbide power transistors and charges two smaller vehicles simultaneously at up to 250kW each, or one vehicle at 460kW. The exterior design meets IP55 and IK10, and cables are top-mounted to reduce the changes of damage, on a moving arm to extend reach ...

Navitas Semiconductor has demonstrated a 4.5kW 54V server power supply using both GaN and SiC transistors. Claimed density is “over 130W/in3 with efficiency over 97%. The architecture replaces the standard four diode bridge (and boost power factor correction) at the front end with an active all-transistor circuit – a multi-phase totem pole power factor corrector. While often called ‘bridgeless’ because ...

Long Beach, CA: Rohm Semiconductor rose above the industry’s GaN vs SiC debate with announcements from both camps. The first was a design win for its 650V GaN device, the EcoGaN, for the 45W output USB-C charger C4 Duo (pictured) by Innergie (a Delta brand). The company said that its GaN device contributes to efficiency in power supply and increased ...

SemiQ will be exhibiting its 1.2kV SOT-227 silicon carbide mosfet power modules at APEC, the Applied Power Electronics Conference, at the end of February. The modules come with or without a co-packaged Schottky diode, with current ratings between 30 and 113A, and on-resistance spanning 80mΩ to 20mΩ respectively (see table). The SOT-227 package is designed to be bolted to a ...

Infineon is putting 1,200V and 2,000V SiC mosfet half bridges into 62mm module packaging. “The package enables the use of SiC for mid-power applications from 250kW, where silicon reaches the limits of power density with IGBT technology,” according to the company. “Symmetrical internal package design provides identical switching conditions for the upper and lower switches.” For speedy replacement, the main ...

Only a few weeks ago Onsemi announced that its silicon carbide power transistors are to be used in BorgWarner Viper electric vehicle traction inverters, and now STMicroelectronics has revealed something similar. “STMicroelectronics will supply BorgWarner with third-generation 750V silicon carbide power mosfet die for their proprietary Viper-based power module,” according to ST. “This power module is used in BorgWarner’s traction ...

Toshiba has announced twelve 650V silicon carbide (SiC) Schottky barrier diode (SBDs) based upon its 3rd generation technology. In this series, called TRSxxx65H, according to the company a new Schottky metal has been employed, and the junction barrier structure has been changed to lower the electric field compared with the 2nd generation to reduce leakage. Versions with nominal maximum continuous ...

Infineon has used its latest silicon carbide die technology in a 1,200V mosfet for automotive on-board chargers and dc-dc converters. The snappily-named AIMBG120R010M1 comes in a 10 x 15 x 4.4mm D2PAK-7L (7 lead TO263) package and handles 1.2kV across -55 to 175°C. Creepage is 5.89mm, suiting the device to 800V systems. Its ‘Gen1p’ process has been created to improved ...

Tektronix has created a automated double-pulse test set-up for GaN and SiC power supply designs, that also works with silicon mosfets and IGBTs. Called ‘WBG-DPT Solution’, it is a combination of test gear from its existing equipment portfolio, and software for that test gear, which makes measurements to JEDEC and IEC standards where applicable. “With the ability to run on ...

Infineon and Foxconn aim to establish a long-term partnership in EVs with an MoU focussing on SiC development. “The automotive industry is evolving. With the rapid growth of the EV market and the associated need for more range and performance, the development of electromobility must continue to advance and innovate,” said Peter Schiefer (pictured left) President of the Infineon Automotive ...