Called the GD25UF series, they run from 1.14V-1.26V and “provide for a simpler power system architecture, and for direct interfacing between the I/O pins of the SoC or processor and the GD25UF device”, according to the company.
The 64Mbit GD25UF64E is in production in 3 x 4mm SOP8 packaging, 4 x 4mm USON8, WLCSP or known-good-die.
The 128Mbit GD25UF128E is sampling, and 32 and 256Mbit are in the pipeline.
A low-power mode allows operation up to 50MHz. Below this frequency, active read is possible at 0.4mA. Deep power-down takes this to 100nA.
In fast read mode, operation is up to 120MHz and data transfer at up to 480Mbits/s.
There is also a ‘low EMI’ mode, operating at 60MHz over a double transfer-rate (DTR) quad I/O interface, whihc also offers 480Mbit/s data transfer while minimising clock-generated noise, said GigaDevice.
Operation is over -40 to +85°C.
“Users of chips manufactured at advanced process nodes require low-voltage flash memory products
that are optimised for the applications that they support, such as IoT devices, mobile phones, PCs, laptops and consumer devices,” said GigaDevice marketing director Syed Hussain.