Winner – Cambridge GaN Devices Power System Product of the Year

The enhancement-mode GaN transistor can be operated like a silicon power mosfet or superjunction without the need for special gate drivers, driving circuitry or unique gate voltage clamping mechanisms.

Integrated functions, such as current sensing, mean users can save on external components.

The judges were impressed with the technical detail provided and evidence of the ICs’ environmental benefits.

Highly commended – STMicroelectronics

Shortlist

* Cambridge GaN Devices (CGD) – IceGaN HEMT ICs
* Cosel – GHA700F
* Eggtronic – ClassEgg
* Mornsun Guangzhou Science & Technology – LM-R2 enclosed power supply
* Navitas Semiconductor – GaNSense control power ICs
* Power Integration – 900V-rated InnoSwitch3-AQ flyback switcher IC family
* QPT – qGaN module
* Silanna Semiconductor – SZPL3002A
* STMicroelectronics – ACEPACK 1 and ACEPACK 2 SiC power modules
* TDK-Lambda – MU4 modular 1U high power supply