Infineon adds to 1.2kV IGBT totem pole modules

Rated at 300, 450, 600 and 900A (see table below) the transistor pair inside the modules is connected in a high and low-side totem pole half bridge.

“New chip dimensions enable optimisation of the module layout to reduce switching losses,” according to the company. “As a result, switching losses for the 600A module are reduced by up to 24%compared to the former generation. This simplifies design-in for applications with higher switching frequency. All features can be implemented in the same footprint facilitating the upgrade of existing inverter system designs.”

Footprint is ~62 x 152mm.

Each transistor has an inverse-parallel diode, and a thermistor is installed in the module.

Maximum overload junction temperature is 175°C, and applications are foreseen in solar and drive applications, and commercial, construction and agricultural vehicles, as well as uninterruptible power supply inverters.