1.2kV and 2kV SiC half-bridges in 62mm modules switch 250kW

Infineon is putting 1,200V and 2,000V SiC mosfet half bridges into 62mm module packaging.

“The package enables the use of SiC for mid-power applications from 250kW, where silicon reaches the limits of power density with IGBT technology,” according to the company. “Symmetrical internal package design provides identical switching conditions for the upper and lower switches.”

For speedy replacement, the main power terminals have screw connections, and the baseplate has holes for screw mounting.

Control terminals are push-fit, and some parts have pre-applied thermal interface material (TIM, see table below)

1.2kV variants, said Infineon, are available at 5mΩ 180A, 2mΩ 420A and 1mΩ 560A, and 2kV at 4mΩ 300A and 3mΩ 400A – with 1.2kV 3mΩ and 2kV 5mΩ versions to follow in the first quarter next year.

The resistances provided above seem to be to one significant figure. For detail, see these product pages:

FF3MR20KM1HNEW 2.6mΩ 2,000V FF4MR20KM1HPNEW 3.5mΩ 2,000V with TIM FF2MR12KM1HPNEW 2mΩ 1,200V with TIM FF2MR12KM1HNEW 2mΩ 1,200V FF6MR12KM1HNEW 5.5mΩ 1,200V FF1MR12KM1HPNEW 1.5mΩ 1,200V with TIM FF3MR20KM1HPNEW 2.6mΩ 2,000V with TIM FF6MR12KM1HPNEW 5.5mΩ 1,200V with TIM FF4MR20KM1HNEW 3.5mΩ 2,000V FF1MR12KM1HNEW 1.5mΩ 1,200V

Applications are foreseen in solar, server, energy storage, vehicle charger, traction, commercial induction cooking and power conversion.