Tag Archives: Rohm

Rohm has created a proprietary trench MOS structure for 100V Schottky diodes to improve the trade-off between forward voltage and reverse leakage. It has been used to create the YQ series of rectifier diodes, available in surface-mount packages from 0.5 x 1mm to TO-263 with ratings between 1A and 30A. Most of them are available with automotive qualification. Leakage is ...

NGK Insulators has teamed up with Rohm to produce a complete energy storage evaluation kit for IoT devices including shelf-edge labels. Called REFLVBMS001-EVK-001, it measures 56 x 32 x 1.6mm and the components, including the battery, stand a maximum of 1mm above the PCB. It can accept power at 4.5 to 5.5V, and outputs up to 500mA at one of ...

Rohm is aiming at industrial and consumer applications with a ‘zero-drift’ operational amplifier which scores 9µV and 50nV/°C for its input offset – both maximum figures, which are typically 1µV and 15nV/°C. A first for the company, LMR1002F-LB, as it will be called, has a chopper architecture. Input current is typically 150pA (25°C) with 10pA offset. Both inputs and output are ...

Rohm has added a lineup of 600V super-junction mosfets in 6.5 x 7 x 1.66mm SOT-223-3 packaging. “In recent years, power supplies for lighting and motors for pumps are required to be smaller as devices become more sophisticated – spurring the demand for compact mosfets that are essential for switching operation,” said the company. “Generally, however, it has been difficult ...

Rohm has developed a 120W 905nm infra-red laser diode for lidar. Called RLD90QZW8, “original technology allows Rohm to reduce the temperature dependence of the laser wavelength to just Δ11.6nm – 0.10nm/°C”, said the company. “This makes it possible to narrow the bandpass filter while extending the detection range.” 120W is at 38A where the diode drops 13V (50ns pulses, 0.05% ...

Rohm has introduced a nanosecond gate driver for GaN power transistors, aimed at lidar, dc-dc converters and Class-D audio. “It is ideal for high-speed GaN switching, with a minimum gate input pulse width of 1.25ns,” according to the company. “As GaN devices are sensitive towards gate input over-voltage, Rohm has developed a method to suppress gate overshoots and has implemented ...

Rohm has developed its first silicon capacitors, the 400 x 200 x 185μm ( 01005, 0402 metric) BTD1RVFL series which covers 100pF to 1nF. “The mounting area is reduced by approximately 55% over general 0201 [0603 metric] products to just 0.08mm2.” according to the company. “Moreover, a built-in transient voltage suppressor protection element ensures high ESD resistance.” They are rated ...

Rohm has developed a range of five 100V dual mosfets for single-phase or three-phase bridges in fan motor drives. Four of them are dual n-channel in 5 x 6mm or 3.3 x 3.3mm packages, and one has one n-channel and one p-channel mosfet in the same 5 x 6mm package. “Recent years have seen a transition to higher voltages from ...

To shrink size and power consumption for wearables, Rohm has turned to lasers for a short-range proximity detector. Built around a vcsel (vertical cavity surface-emitting laser), RPR-0720 measures only 2 x 1 x 0.55mm including its photodiodes and control IC. The internal IC operates over 1.7 to 3.6V, drawing 16μA (typ for 50μs mode, 35μA max) when it is not ...

Rohm has co-packaged a gate driver and a 650V GaN power transistor to ease the design of power supplies in servers and ac adaptors. “While GaN hemts are expected to contribute to greater miniaturisation and improved power conversion efficiency, the difficulty in handling the gate compared to silicon mosfets requires the use of a dedicated gate driver,” according to the ...