Discretes | Electronics Weekly

80V symmetric dual n-channel mosfet in 3 x 3mm

Steve Bush — Tue, 02 Apr 2024 15:20:36 +0000

New Yorker Electronics is aiming at displacing PowerPAK 1212 packaged mosfets by stocking a pair of symmetric 80V n-channel mosfets in a single 3.3 x 3.3mm package from Vishay. Called ...

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Small top-side cooled automotive mosfets keep heat out of the PCB

Steve Bush — Tue, 26 Mar 2024 10:52:05 +0000

Infineon is aiming at automotive power control with a 5 x 7mm top-side cooled surface-mount package, pitching it against the 5 x 6mm bottom-cooled SSO8. The package, SSO10T, has a ...

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Compact hybrid capacitors are AEC-Q200 compliant

Steve Bush — Wed, 20 Mar 2024 16:28:45 +0000

Panasonic Industry has introduced compact surface-mount electrolytic polymer hybrid capacitors that are “one size smaller than ZC series with the same capacitance” and AEC-Q200 compliant for automotive use, it said. ...

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GaN, SiC and Si squeeze 4.5kW out of server PSU

Steve Bush — Tue, 12 Mar 2024 17:17:31 +0000

Navitas Semiconductor has demonstrated a 4.5kW 54V server power supply using both GaN and SiC transistors. Claimed density is “over 130W/in3 with efficiency over 97%. The architecture replaces the standard ...

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2kV SiC mosfet in TO-247 has 14mm creepage and 5.4mm clearance

Steve Bush — Tue, 12 Mar 2024 11:34:48 +0000

Infineon Technologies has put 2kV silicon carbide mosfet die in its four lead TO-247PLUS-4-HCC package, aiming them at systems with dc links up to 1.5kV. “It is the first discrete ...

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GHz baluns and couplers in 0603 packaging

Steve Bush — Fri, 01 Mar 2024 12:28:21 +0000

Component distributor Richardson RFPD is to stock a range of 0603 (1.5 x 0.7mm) RF components from TTM Technologies, all branded ‘Xinger’ and “designed to meet the density and performance ...

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APEC: 1mΩ 100V GaN transistor has dual-side cooling

Caroline Hayes — Thu, 29 Feb 2024 10:58:25 +0000

EPC is claiming “the lowest on-resistance GaN FET on the market” for its 1mΩ 100V EPC2361, which comes in a 3 x 5mm QFN package with top and bottom cooling. ...

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Low-leakage 100V trench Schottky diodes for industrial and automotive

Steve Bush — Fri, 16 Feb 2024 11:49:01 +0000

Rohm has created a proprietary trench MOS structure for 100V Schottky diodes to improve the trade-off between forward voltage and reverse leakage. It has been used to create the YQ ...

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100V bi-directional GaN transistor switches power rails

Steve Bush — Mon, 12 Feb 2024 14:27:46 +0000

Innoscience Technology has launched a 100V bi-directional GaN-on-silicon bi-directional transistor, intended to replace a pair of back-to-back mosfets for turning a power rail on and off. It “can be employed ...

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P-channel mosfet handles 60V and 90A for Automotive

Steve Bush — Mon, 05 Feb 2024 10:50:41 +0000

Toshiba has introduced a 60V p-channel mosfet rated at 60V and 90A continuous current, with AEC-Q101 qualification for automotive use. Called XPH8R316MC (90A), the company sees it being used in ...

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