New Yorker Electronics is aiming at displacing PowerPAK 1212 packaged mosfets by stocking a pair of symmetric 80V n-channel mosfets in a single 3.3 x 3.3mm package from Vishay. Called SiZF4800LDT, the “device provides designers with a space-saving solution for synchronous buck converters, point-of-load converters, and half-bridge and full-bridge power stages,” according to New Yorker. “In these applications, the high ...
Infineon is aiming at automotive power control with a 5 x 7mm top-side cooled surface-mount package, pitching it against the 5 x 6mm bottom-cooled SSO8. The package, SSO10T, has a 10μm gap instead of a thermal pad on the PCB side, and around 95% of heat will leave through the top, according to the company, typically to the ECU housing ...
P-channel diamond mosfets have been made many times because the carbon bulk can be doped with boron, or surface hydrogen can pull appropriate carriers into the channel. N-channel diamond mosfets have not proved so easy, blocking the route to diamond CMOS and all the high-voltage (bandgap = 5.5eV), high temperature and high thermal conductivity advantages that it might bring. Now ...
Microchip is aiming at motor control by combining a triple half-bridge mosfet gate driver, a 100MHz processor and CAN FD transceivers in the same IC. Other members of the family offer LIN transceivers instead of CAN, or a CAN interface without transceivers, or no CAN or LIN, and a base model has a 70MHz processor. Some have SENT interfaces for ...
LEM and Semikron Danfoss have teamed up to monitor current in automotive silicon carbide power mosfet modules. The result is ‘Nano’, a current sensor that is compatible with Semikron’s DCM SiC power modules, which are rated at 750 or 1,200V and 200 to 1,000A. “The idea behind the Nano concept was to design a core-based current sensor that could fit ...
Alpha and Omega has announced a double-side-cooled 100V 197A (25°C) mosfet in a 5 x 6mm DFN package. Called AONA66916, thermal resistance form the junction to the top and bottom surfaces is 0.5 and 0.55C/W respectively. “The top-exposed DFN 5×6 package shares the same footprint as AOS’ standard DFN 5×6 package, eliminating the need to modify existing PCB layouts,” said ...
Rohm has added a lineup of 600V super-junction mosfets in 6.5 x 7 x 1.66mm SOT-223-3 packaging. “In recent years, power supplies for lighting and motors for pumps are required to be smaller as devices become more sophisticated – spurring the demand for compact mosfets that are essential for switching operation,” said the company. “Generally, however, it has been difficult ...
SemiQ will be exhibiting its 1.2kV SOT-227 silicon carbide mosfet power modules at APEC, the Applied Power Electronics Conference, at the end of February. The modules come with or without a co-packaged Schottky diode, with current ratings between 30 and 113A, and on-resistance spanning 80mΩ to 20mΩ respectively (see table). The SOT-227 package is designed to be bolted to a ...
Central Semiconductor has announced five 650V n-channel super-junction mosfets in TO-220FP packaging. They are: CDMSJ2204.7-650 (4.7A) CDMSJ2207.3-650 (7.3A) CDMSJ22010-650 (10A) CDMSJ22013.8-650 (13.8A) CDMSJ22029-650 (29A) “These super-junction mosfets extend efficiency for a variety of end applications,” according to Central marketing director Tom Donofrio. Additionally, “these pair well with Central’s fast rectifiers for power factor correction”.
Vishay has introduced a photovoltaic mosfet gate driver qualified to AEC-Q102 for automotive use. Called VOMDA1271, “the component is available in a SOP-4 housing. The driver is the only one of its kind in this package size with an isolation voltage of 3.750 V [sic] and a typical open-circuit output voltage of 8.5V”, according to component distributor Rutronik, which is ...
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