Tag Archives: driver

Innoscience Technology has created a gate driver specifically for GaN power transistors. The single-channel INS1001DE is intended to supply fast powerful voltage-regulated waveforms to the gates, which are extremely sensitive to over-voltage stress. Its output pulse amplitude is set by a low-drop-out regulator using two resistors, to, for example 6V which is commonly specified for enhancement-mode GaN hemts (diagram below ...

TDK has announced automotive smart motor drivers that can handle 4 x 1A peak current and include an Arm Cortex-M3 processor core. HVC 5222D with 32kbyte of flash and HVC 5422D with 64kbyte can drive brushless dc, brushed dc (2A) and stepper motors. They also have 4kbyte ram, 2kbyte of emulated eeprom and 1kbyte of non-volatile registers, and are “SEooC ...

Analog Devices has created a stand-alone 100V half-bridge driver for GaN power hemts “with a propagation delay of 10ns and delay matching of 1.5ns between the top and bottom channels, making it suitable for high-frequency dc-dc converters, motor drivers and class-D audio amplifiers”, according to the company. Called LT8418, this IC looks very much like the output stage used within ...

Microchip is aiming at motor control by combining a triple half-bridge mosfet gate driver, a 100MHz processor and CAN FD transceivers in the same IC. Other members of the family offer LIN transceivers instead of CAN, or a CAN interface without transceivers, or no CAN or LIN, and a base model has a 70MHz processor. Some have SENT interfaces for ...

Allegro MicroSystems has created an isolated gate driver IC for GaN power transistors that has no need for high-side bootstrapping nor the provision of a secondary side drive supply voltage. Instead, a dc-dc converter within AHV85111 produces secondary-side dc power rails – one positive and one negative – to provide gate drive power from a 12V supply (10.8 – 13.2V) ...

Vishay has introduced a photovoltaic mosfet gate driver qualified to AEC-Q102 for automotive use. Called VOMDA1271, “the component is available in a SOP-4 housing. The driver is the only one of its kind in this package size with an isolation voltage of 3.750 V [sic] and a typical open-circuit output voltage of 8.5V”, according to component distributor Rutronik, which is ...

Rohm has introduced a nanosecond gate driver for GaN power transistors, aimed at lidar, dc-dc converters and Class-D audio. “It is ideal for high-speed GaN switching, with a minimum gate input pulse width of 1.25ns,” according to the company. “As GaN devices are sensitive towards gate input over-voltage, Rohm has developed a method to suppress gate overshoots and has implemented ...

Toshiba is aiming at pumps, air conditioning and fans with through-hole versions of its latest 600V three-phase brushless dc motor drivers. TPD4163K and TPD4164K come in a 32.8 x 13.5 x 3.525mm ‘HDIP30′ package, which has pins on a 1.778mm pitch (Electronics Weekly has asked why this odd pitch was chosen – watch this space). “This new package reduces PCB ...

Navitas recently announced its fourth generation of GaN power transistors with monolithically-integrated gate drivers. Branded GaNsafe, the company has increased the protection integrated alongside the driver and has moved to 10 x 10mm TOLL packaging, with a custom internal leadframe (diagram below). The initial products are rated at 650V (800V transients), cover Rds(on) from 35 to 98mΩ (table below), and ...

Rohm has co-packaged a gate driver and a 650V GaN power transistor to ease the design of power supplies in servers and ac adaptors. “While GaN hemts are expected to contribute to greater miniaturisation and improved power conversion efficiency, the difficulty in handling the gate compared to silicon mosfets requires the use of a dedicated gate driver,” according to the ...