Memory

Next month Toshiba starts sampling its XG6-P solid SSD series, a derivative of its NVMe M.2-based XG6 Series offering up to 2,048 GB capacity. XG6-P SSDs are suitable for high-end workstation PCs and gaming systems, as well as cost-optimized data center and composable infrastructures. The SSDs use  96-layer BiCS Flash 3D TLC chips. The SSDs have a PCIe Gen 3 x4 lane ...

To secure the IoT, smart homes, medical devices and drones, Infineon’s Optiga Trust X supports a high-speed I²C communication interface up to 1MHz. Typical current consumption is 20mA, which drops to 70µA in sleep mode.  The elliptic curve cryptography (ECC) NIST P256, AES128 and SHA-256 has built-in tamper-proof non volatile memory to enhance system security. The Optiga Trust X is ...

Samsung says it has developed a 3rd-generation 10nm class 8Gb DDR4  DRAM for servers and high-end PCs. Mass production starts in H2. of the 1z-nm 8Gb DDR4 will begin within the second half of this year to accommodate next-generation enterprise servers and high-end PCs expected to be launched in 2020. Samsung’s development of the 1z-nm DRAM paves the way for an ...

Toshiba makes XD5 Series NVMe SSD platform available in a 2.5-inch, 7mm low-profile form factor

Micron’s  1300 SATA SSD uses 96-layer TLC 3D NAND-based SSDs and delivers storage capacities up to 1TB (in M.2) and 2TB (in 2.5-inch).  It delivers sequential reads/writes up to 530MB/520MB per second and random reads/writes up to 90,000/87,000 input/output operations per second (IOPS). It uses 75 mW. It supports Microsoft Windows 10 Modern Standby requirements including adaptive thermal management and near-instant transmission to ...

Samsung has begun mass producing the industry’s first 1TB embedded Universal Flash Storage (eUFS) 2.1, for use in mobile applications. Phones will have storage capacity comparable to a premium notebook PC, without having to pair their phones with additional memory cards. “The 1TB eUFS is expected to play a critical role in bringing a more notebook-like user experience to the ...

Alliance Memory has introduced a family of high-speed CMOS pseudo SRAMs (PSRAMs) with densities from 8 to 128Mbit in 6 x 7 x 1mm 48-ball FPBGA and 4 x 4 x 1mm 49-ball FPBGA packages. “The devices combine the most desirable features of SRAMs and DRAMs to provide designers with easy-to-use, low-power, and cost-effective memory solutions for wireless, automotive, networking, ...

3D NAND has become the dominant flash type, reports Digitimes. Micron’s 3D output is 90% of its total NAND output. Samsung’s  3D NAND manufacturing is 85% of its total NAND chip output. Toshiba’s 3D NAND output is 75% of its NAND output. Hynix’ 3D NAND output is 60% of its total NAND output. The price of NAND has fallen 40% ...

Marvell announces an NVMe over Fabric (NVMe-oF) SSD converter controller

Samsung has begun mass producing the industry’s first 4 bit-per-cell (QLC)  4TB SATA SSD for consumers based on 1Tb V-NAND. The 1Tb 4-bit V-NAND chip also allows the production of  a 128GB memory card for smartphones. Typically, as data stored within a memory cell increases from three bits to four, the chip capacity per unit area would rise and the ...