Surface mount frequency oscillators manufactured in the UK by Euroquartz are capable of surviving up to 3,000G shock and operate in the extended industrial temperature range. Frequency control specialist, Euroquartz is to launch a new range of UK manufactured surface mount clock oscillators capable of up to 3000G shock survivability with extended industrial temperature range. The EQXO-75UIE oscillator series is manufactured in ...
Analogue and Discretes
12bit 1.6Gsample/s quad ADC qualified for space use
Teledyne has qualified its four channel 12bit 1.6Gsample/s EV12AQ600 ADC for space use, describing it as “industry’s first four-channel analogue-to-digital converter to be qualified for space deployment”. It now meets NASA and ESA requirements, complying with MIL-PRF-38535 (QML-Y) and ESCC 9000. The most recent testing was to evaluate total ionising dose (TID) tolerance, where it scored 150kRad. “It means that [customers] ...
22MHz precision dual op-amp draws 3.4mA
Barely three months after its last new precision op-amp, STMicroelectronics has released another, this time with a gain-bandwidth of 22MHz, a slew rate of 11V/μs and a maximum input-offset voltage of 200µV (50µV typical at 25°C). Called TSV7722, it is aimed at high-speed signal conditioning and accurate current measurement in power-conversion circuits and optical sensors. Input noise density of is 7nV/√Hz, ...
Active diodes for bridge rectifiers cut that pesky 0.6V drop
Alpha and Omega Semiconductor has announced a family of active diodes which can reduce the 1.2V forward drop of 600V bridge rectifiers. Branded AlphaZBL, the first two parts are: AOZ7200 in SOT-23 for external mosfets (right) AOZ7270 in DFN 5×7 with internal 600V 190mΩ super-junction mosfet (below) “Both products are self-powered from the AC line and do not require external ...
650V drivers for mosfet half-bridges
Infineon has used a silicon-on-insulator process to create a pair of fast 650V half-bridge drivers on small-outline packages for its EiceDriver portfolio. 2ED2110 (images below) is a ±2.5A driver in 16pin DSO-16W packaging 2ED2101 (and ..03, ..04, image above) are +290mA -700mA drivers in 8pin DSO-8 packaging The company emphasises transient immunity for all devices: They have “as excellent ruggedness ...
Diodes reveals its first precision op-amp, and it is micro-power
Diodes has entered the precision low-voltage low-power op-amp fray with a dual-channel 8μV(typ) input offset voltage device consuming 12μA quiescent per amplifier. AS2333, as it will be known, uses chopper stabilisation which reduces drift over time and temperature. Update: Diodes automotive-qualified this part in 2022 Operation is across 1.8V to 5.5V and -40°C to +125°C, and it has rail-to-rail inputs (100mV ...
Covid-19 takes its toll in Q2
The latest report from DMASS shows a downturn in the European semiconductor business across Europe in Q2 and directly links the fall of over 20% to the effects of the global pandemic and ensuing lockdown. The report records a fall in sales of 20.7% to €1.82bn in Q2 compared to the first three months of 2020. The fall was feared ...
Functional safety intelligent power switches are fast
STMicroelectronics has introduced fast-starting intelligent power switches for safety-instrumented systems. They are designed to meet IEC 61131-2. “With power-on delay time of less than 60µs, the IPS160HF and IPS161HF satisfy standardised requirements for interface types C and D in Safety Integrity Level (SIL) Class 3 applications,” according to the company. They will drive complex resistive, capacitive and inductive loads with one side ...
A glimpse of the world from an Analogue Integrated Circuit designer’s perspective – Part 1
A veteran of 31 years in the Analogue Integrated Circuit industry, Ash Madni takes a personal look at how rapidly the electronics have evolved over his career from 1985 with 3GHz Bipolar technology to 300GHz FDSOI...
ULVAC PZT piezoelectric sputtering tool advances MEMS manufacturing
ULVAC is shipping PZT piezoelectric thin-film sputtering equipment which advances the development of MEMS devices.