EPC has used GaN transistors to create a high-power Class-D two-channel audio power amplifier design. Instantiated in evaluation kit EPC9192, it is capable of pushing 700W/channel into 4Ω (or 2Ω) or 350W/channel into 8Ω. Bridging the two channels results in 1.4kW drive into 4 to 8Ω. Key components, per channel, are a pair of 200V EPC2307 GaN transistors on a ...
Innoscience Technology has created a gate driver specifically for GaN power transistors. The single-channel INS1001DE is intended to supply fast powerful voltage-regulated waveforms to the gates, which are extremely sensitive to over-voltage stress. Its output pulse amplitude is set by a low-drop-out regulator using two resistors, to, for example 6V which is commonly specified for enhancement-mode GaN hemts (diagram below ...
Navitas Semiconductor has demonstrated a 4.5kW 54V server power supply using both GaN and SiC transistors. Claimed density is “over 130W/in3 with efficiency over 97%. The architecture replaces the standard four diode bridge (and boost power factor correction) at the front end with an active all-transistor circuit – a multi-phase totem pole power factor corrector. While often called ‘bridgeless’ because ...
Long Beach, CA: Rohm Semiconductor rose above the industry’s GaN vs SiC debate with announcements from both camps. The first was a design win for its 650V GaN device, the EcoGaN, for the 45W output USB-C charger C4 Duo (pictured) by Innergie (a Delta brand). The company said that its GaN device contributes to efficiency in power supply and increased ...
Transient gate overvoltage ringing during turn-on is a common phenomenon in GaN-based power converters, but a lifetime equation can account for all bias conditions with respective fractional lifetime, say Shengke Zhang, Han Gao and Siddhesh Gajare. Gate overvoltage spikes during device turn-on transients are commonly observed in GaN HEMTs (high electron mobility transistors) under high frequency, fast-switching conversion applications. The ...
EPC is claiming “the lowest on-resistance GaN FET on the market” for its 1mΩ 100V EPC2361, which comes in a 3 x 5mm QFN package with top and bottom cooling. 1mΩ is at 50A 25°C with 5V on the gate, and rises to ~1.8mΩ at the max operating temperature of 150°C (minimum is -40°C). The preliminary data sheet has no ...
Analog Devices has created a stand-alone 100V half-bridge driver for GaN power hemts “with a propagation delay of 10ns and delay matching of 1.5ns between the top and bottom channels, making it suitable for high-frequency dc-dc converters, motor drivers and class-D audio amplifiers”, according to the company. Called LT8418, this IC looks very much like the output stage used within ...
EPC has created a GaN transistor dc-dc converter demo board that converts an input between 36 and 60V to a regulated 13V 16A output. Called EPC9195, it is a synchronous buck converter built around a pair of 2.5 x 1.5mm EPC2619 GaN hemts, and an LTC7891 controller IC from Analogue Devices. “48V input is getting popular due to USB PD ...
The enhancement-mode GaN transistor can be operated like a silicon power mosfet or superjunction without the need for special gate drivers, driving circuitry or unique gate voltage clamping mechanisms. Integrated functions, such as current sensing, mean users can save on external components. The judges were impressed with the technical detail provided and evidence of the ICs’ environmental benefits. Highly commended ...
Industry veteran Rupert Baines is to be CEO at GaN-based motor drive company QPT of Cambridge UK from 1 April. Prior to this, he has been CEO at UltraSoC and CMO of Codasip. “Rupert has been the lead adviser for QPT since January 2022 and his support has been invaluable,” said QPY founder and CTO Rob Gwynne. “We are now ...
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