EPC has used GaN transistors to create a high-power Class-D two-channel audio power amplifier design. Instantiated in evaluation kit EPC9192, it is capable of pushing 700W/channel into 4Ω (or 2Ω) or 350W/channel into 8Ω. Bridging the two channels results in 1.4kW drive into 4 to 8Ω. Key components, per channel, are a pair of 200V EPC2307 GaN transistors on a ...
Navitas Semiconductor has demonstrated a 4.5kW 54V server power supply using both GaN and SiC transistors. Claimed density is “over 130W/in3 with efficiency over 97%. The architecture replaces the standard four diode bridge (and boost power factor correction) at the front end with an active all-transistor circuit – a multi-phase totem pole power factor corrector. While often called ‘bridgeless’ because ...
DARPA has awarded Raytheon a $15m four-year contract to increase the power density of GaN power devices in military radar. “The improved transistors will have 16 times higher output power than traditional Gallium Nitride with no increase in operating temperature,” according to the company. “Thermal management is no longer a limiting factor,” added Raytheon president Colin Whelan. Key to this ...
Rohm has co-packaged a gate driver and a 650V GaN power transistor to ease the design of power supplies in servers and ac adaptors. “While GaN hemts are expected to contribute to greater miniaturisation and improved power conversion efficiency, the difficulty in handling the gate compared to silicon mosfets requires the use of a dedicated gate driver,” according to the ...
EPC Space has introduced radiation-hardened gallium nitride devices for space-borne power converters and other rugged environments. There are two devices, one rated at 200V and the other at 300V: EPC7020G – 200V, 14.5mΩ, 80A (pictured) EPC7030G – 300V, 32mΩ, 50A “Applications including power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation, reaction wheels and deep space ...
Navitas is claiming it can deliver 3,200W from a 40 x 73.5 x 185mm (544cm3) data centre power supply, which is 5.9W/cm3 and almost 100W/in3. Called CRPS185, it has a 1U CRPS (common redundant power supply) form-factor. Inside, the architecture starts with an interleaved CCM (continuous conduction mode) PFC (power factor corrector) and continues into a full-bridge LLC (inductor-inductor-capacitor) converter ...
Micsig Technology is aiming at mains and high-voltage GaN power supply development with a series of optical fibre isolated oscilloscope probes, with bandwidths up to 1GHz and risetimes down to ≤350ps. This kind of probe has no electrically-conductive path between probe tip and scope. Instead, the scope end of the probe and the probe’s head are linked by optical fibres, ...
To get the best out of GaN power transistors, which are far faster than silicon or silicon carbide transistors, microwave design techniques including RF simulation is essential, according to Cambridge start-up QPT. Final assembly, EMC screen partially lifted The alternative is to slow operation until the advantages of GaN fade away, or to risk durability as unseen ultra-fast overshoot and ...
TI announced a co-packaged 650V GaN half bridge and driver at APEC in Florida this week, intended for use in active-clamp fly-back dc-dc converters delivering less that 75W. Called LMG2610, the IC includes a pair of GaN transistors in a half-bridge, gate drivers, a bootstrap diode and a high-side gate-drive level shifter, all in a 9 x 7mm QFN package. ...
Power Integrations is aiming at industrial and automotive power supplies up to 100W, by building 900V GaN transistors into its InnoSwitch3 fly-back switcher family – something it announced at APEC in Florida. Previously 750V was the highest rating amongst the GaN members of this family. There are two product lines now with 900V gallium nitride options: The AEC-Q100-qualified InnoSwitch3-AQ family ...
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