EPC has used GaN transistors to create a high-power Class-D two-channel audio power amplifier design. Instantiated in evaluation kit EPC9192, it is capable of pushing 700W/channel into 4Ω (or 2Ω) or 350W/channel into 8Ω. Bridging the two channels results in 1.4kW drive into 4 to 8Ω. Key components, per channel, are a pair of 200V EPC2307 GaN transistors on a ...
EPC is claiming “the lowest on-resistance GaN FET on the market” for its 1mΩ 100V EPC2361, which comes in a 3 x 5mm QFN package with top and bottom cooling. 1mΩ is at 50A 25°C with 5V on the gate, and rises to ~1.8mΩ at the max operating temperature of 150°C (minimum is -40°C). The preliminary data sheet has no ...
EPC has created a GaN transistor dc-dc converter demo board that converts an input between 36 and 60V to a regulated 13V 16A output. Called EPC9195, it is a synchronous buck converter built around a pair of 2.5 x 1.5mm EPC2619 GaN hemts, and an LTC7891 controller IC from Analogue Devices. “48V input is getting popular due to USB PD ...
Efficient Power Conversion has added two 40V GaN transistors to its radiation-hardened high-reliability portfolio. EPC7001 has 4mΩ on-resistance, 60A (250A 300µs pulse 25°C) capacity and occupies 7mm2 EPC7002 turns on to 14.5mΩ and can handle 10A (62A 300µs pulse 25°C) through its 1.87mm2 footprint “EPC’s rad hard devices exhibit superior resistance to radiation compared to traditional silicon solutions,” said EPC. ...
To get the best out of GaN power transistors, which are far faster than silicon or silicon carbide transistors, microwave design techniques including RF simulation is essential, according to Cambridge start-up QPT. Final assembly, EMC screen partially lifted The alternative is to slow operation until the advantages of GaN fade away, or to risk durability as unseen ultra-fast overshoot and ...
EPC is aiming at eMobility, forklifts and high-power drones with a 150Arms brushless motor driver design using its GaN power transistors. Documents for EPC9186, as it will be known, are not available yet, but the company promises operation from 14V to 80V for “applications such as electric scooters, small electric vehicles and agricultural machinery” in addition to the items above. ...
EPC has created a GaN-based USB PD 3.1 dc-dc evaluation module around one of its integrated power stages and a low-profile (3mm) inductor. Called EPC9177, the converter is intended to meet the demands of multi-port chargers and on-motherboard power conversion from 28 – 48Vin to 12 – 20Vout. The module operates at 720kHz switching frequency and is set to deliver 12V ...
Aiming at laser time-of-flight lidar, Efficient Power Conversion (EPC) has introduced an 80V 15A pulse laser driver IC. EPC21701, as it will be known, can produce pulses down to 2ns at up to 50MHz. Its internal 40A GaN FET is has a monolithically integrated with a gate driver. Internal logic has a 3.3V comp[atible input and needs a 5V supply. ...
GaN semiconductor maker EPC has announced an 80V 4mΩ power transistor at Electronica in Munich, with a 1.5 x 2.5mm footprint and “double the power density compared to EPC’s prior-generation products”, said the company. “This is just the first product of a new generation of discrete transistors and integrated circuits for EPC,” said company CEO and co-founder Alex Lidow. “With ...
EPC has introduced a 100 V, 35 A IC designed for 48 V DC-DC conversion used in high-density computing applications and in 48 V BLDC motor drives for e-mobility, robotics, and drones. The EPC23102 eGaN IC is capable of a maximum withstand voltage of 100 V, delivering up to 35 A load current, while capable of switching speeds greater than ...
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