EPC has used GaN transistors to create a high-power Class-D two-channel audio power amplifier design. Instantiated in evaluation kit EPC9192, it is capable of pushing 700W/channel into 4Ω (or 2Ω) or 350W/channel into 8Ω. Bridging the two channels results in 1.4kW drive into 4 to 8Ω. Key components, per channel, are a pair of 200V EPC2307 GaN transistors on a ...
Need to lay your hands on a 1,300V/µs amplifier module that can output ±12V into heavy loads? Look no further than headphone amplifier boards based on TI’s TPA6120A2, which are available all over the internet. I can take no credit for this discovery – it was pointed out in 2015 by tszaboo on this EEVblog community forum. In the IC, ...
United Monolithic Semiconductors has introduced a 24.25 – 30.5GHz combined output power amplifier, input low-noise amplifier and transit-receive switch. Called CHC6054-QQA, it is manufactured from AlGaN/GaN-on-SiC (gallium nitride on silicon carbide) and gallium arsenide die, both from 150mm wafers. Packaging is 4 x 5mm QFN. It “typically exhibits an Rx gain of 18dB with a noise figure of 3.2dB, and ...
Component distributor Richardson RFPD has prepared a couple of documents on the options available for designers of RF amplifiers. Rather than in-depth, they are a useful introduction to the different possibilities of discrete RF transistors, impedance-matched FETs (IMFETs), and integrated circuit RF amplifiers (MMICs), with component examples picked multiple manufactures whose products it stocks. The papers are: Discrete transistor, IMFET ...
Class-D audio amplifiers are power efficient, but do not beat, or even match, well-designed Class-AB and Class-A amplifiers on many other specs. This said, Delft University of Technology, working with Goodix Technology, seems to have got right up amongst the hi-fi numbers with a 0.18μm BCD prototype IC that achieves 120.9dB dynamic range and -111.2dB peak THD+N. At full power ...
For phased-array C-Band radar, CMPA5259050S and CMPA5259080S from Wolfspeed are respectively 50W and 80W 5.0-5.9GHz GaN MMIC power amplifiers. The “two-stage reactively-matched amplifier approach enables high power and power added efficiency to be achieved in a 5 x 5mm QFN surface -mount package” (black in photo), according to Richardson RFPD, which is stocking the parts, and offering design support. CMPA5259080S ...
I am not sure why pulse generator buffers are so fascinating at the moment. It could be that the workshop’s only crystal-backed generator that can run from 0% to 100% duty cycle is still broken, or it could be that it is simply an enjoyable bite-sized problem to ponder at idle moments. Anyway, here is the idea that occurred instead ...
CML has announced a pair of 6 – 18GHz GaAs pHEMT gain blocks with positive gain slopes up to 16GHz. CMX90G701 and CMX90G702 have gain-slopes of +1dB and +2dB respectively, and are intended to operate C, X and Ku bands for microwave back-haul, radar, satellite communications and 5G fixed wireless access. “They can also be used to eliminate passive equalisers ...
STMicroelectronics has created a pair of 10W Class-D audio amplifiers for use in vehicles “for automotive applications like eCall, telematics and wherever an audio channel needs to reproduce human voice, music or warning messages “, it said. They are almost identical, both offering a digital (I2S) front end, digital core, 24bit DAC (100dB resolution), a Class-D trans-resistance PWM output stage ...
To allow IEPE (integrated electronic piezoelectric) sensors to be used with data acquisition devices with 1MΩ BNC inputs, Pico Technology has created the TA487 IEPE Signal Conditioner. Integrated Electronics Piezo-Electric is a technical standard for piezoelectric sensors that include built-in active impedance conversion (often a FET) to push sensed signals through long cables. Such sensors are used in automotive, medical ...
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