Researchers at the Tokyo Institute of Technology have found a novel way to reduce source and drain contact resistance, and increase carrier mobility, in amorphous oxide transistors. In particular, they are amorphous indium gallium oxide (a-IGZO) thin-film transistors that are being proposed for a form of DRAM, where memory density can be increased by stacking the transistors. The problem is ...
Announced yesterday, researchers from Surrey and Cambridge universities and the National Research Institute in Rome have used thin-film source-gated transistor (SGT) to create compact analogue circuit building blocks that can be used on flexible substrates. Source-gated transistors – SGTs – are uni-polar – they only need n or p-type semiconductor, not both. The research team built two two-transistor building blocks: ...
Transparent transistors have been fabricated around glass tubes of 2mm diameter, at Oregon State University. It replaces a polymer transistor, printed on film and wrapped around the tube, which fell apart when tested as part of an artificial pancreas – a catheter intended to detect blood sugar levels and transmit the information to a wearable insulin pump for diabetics. Key ...
The University of Manchester has made a 1GHz thin-film transistor from amorphous IGZO – indium gallium zinc oxide. The devices, created with Shandong University in China, are made on a high-resistance silicon substrate using Ta2O5 gate dielectric. The material is 80% transparent, opening the door to display applications. “Making a high performance device, like our GHz IGZO transistor, is challenging because ...
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