Tag Archives: Infineon

Infineon has had its forthcoming TC4x automotive microcontrollers cleared for safe AI processing by the Fraunhofer Institute for Cognitive Systems (IKS). “Embedded AI is becoming increasingly important for safety-critical real-time applications,” said Infineon. “However, this also creates new requirements and standards that must be considered during the complete product lifecycle.” The TC4x family includes ‘PPU’ (parallel processing unit), an AI-accelerator ...

Infineon has lined up a Rust programming language compiler for two of its TriCore architecture processor families: the existing TC3x and forthcoming TC4x. “Rust, with its unique memory safety features, has emerged as a viable complement or potential substitute for C/C++ in automotive software development,” according to the company. Working with Infineon, HighTec EDV-Systeme has released an ISO 26262 ASIL ...

Infineon has introduced a ~10 x 20mm antenna-inclusive Bluetooth 5.0 (core spec) module that consumes 1.3mA receiving (-95dBm) and 3mA transmitting (0dBm). Called CYW20822-P4TAI040, it sleeps at 2μA when retaining 32kbyte of ram, or hibernates at 800nA – the latter rising to 950nA hibernating with the wake-up receiver enabled. At maximum transmit power (+4dBm) up to 250m of range can be ...

Infineon has announced a family microcontrollers combining an Arm Cortex-M55 core (including ‘Helium’ DSP support), an Arm Ethos-U55 machine learning processor, and an Arm Cortex-M33 core, which has in-built security, paired with Infineon’s own ‘NNLite’ neural network accelerator. “Support for ‘always-on’ sensing and response makes the devices ideal for IoT and industrial segments such as smart home, security, wearables and ...

Infineon has opened a quantum electronics and AI-based power analysis laboratory. Established near Munich, its objectives are to develop and test support ICs for ion trap quantum computers, and to develop AI algorithms for the early detection of variances in power systems. ~20 researchers will be employed, and the lab has a cryostat for research down to 4K (-269°C). One ...

Hyundai and Kia have signed supply agreement for SiC and silicon power semiconductors from Infineon, lasting to 2030, for which Infineon which will build and reserve manufacturing capacity for SiC and Si power modules and chips. “This partnership empowers Hyundai Motor and Kia to stabilise its semiconductor supply,” said Hyundai head of strategy Heung Soo Kim. “Infineon stands as a valued ...

Qualcomm is to create RISC-V based silicon for wearables, working with Google to optimise it for Google’s Wear OS. “We are excited to extend our work with Qualcomm Technologies and bring a RISC-V wearable solution to market,” said Google general manager Bjorn Kilburn. Leading up to this, the companies will continue to invest in Snapdragon Wear platforms for the Wear ...

Infineon recently released 650V H variants of its gen 7 IGBTs, without a lot of detail on how they differ from the rest of gen 7, so Electronics Weekly got in touch. H brings the total to three gen 7 classes in two voltage ranges: H7 in 650V and 1.2kV, T7 in in 650V and 1.2kV, and S7 in 1.2kV. ...

Infineon has used its latest silicon carbide die technology in a 1,200V mosfet for automotive on-board chargers and dc-dc converters. The snappily-named AIMBG120R010M1 comes in a 10 x 15 x 4.4mm D2PAK-7L (7 lead TO263) package and handles 1.2kV across -55 to 175°C. Creepage is 5.89mm, suiting the device to 800V systems. Its ‘Gen1p’ process has been created to improved ...

Infineon Technologies has integrated 600V GaN HD-GIT (hybrid-drain-embedded gate injection transistor) manufacturing into its production line. “The portfolio of discrete and integrated power stage devices provides designers with the necessary flexibility to meet their specific needs for industrial applications complying with JEDEC standards JESD47 and JESD22,” said the company. Available in DSO-20-85, DSO-20-87, HSOF-8-3, LSON-81- and TSON-8 packaging, Rds(on) values ...